Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature
Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature
复制标题
采用超高温生长栅极氧化物的 4H-SiC(0001) p 沟道金属氧化物半导体场效应晶体管的性能改进
DOI：
10.7567/1882-0786/ab1b53
复制
发表时间：
2019
影响因子：
2.3
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
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作者：
K. Moges;T. Hosoi;T. Shimura;Heiji Watanabe
我们制作了4 H-SiC（0001）p沟道金属氧化物半导体场效应晶体管（pMOSFET），其栅极氧化物在1600 °C和0.3 kPa的氧分压下形成。所制备的pMOSFET表现出上级性能，表明抑制了SiO2/SiC界面处的碳相关缺陷。通过随后在1200 °C下采用合成气体退火实现了进一步的性能改进。特别是，峰值场效应迁移率高达13 cm 2 V-1 s-1，是本征空穴迁移率的11%。此外，该晶体管具有高达200 °C的稳定阈值电压和对偏置温度应力的高抗扰性，表明可靠性提高。
We fabricated 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with gate oxide formed at 1600 °C under an oxygen partial pressure of 0.3 kPa. The fabricated pMOSFETs showed superior performance, suggesting suppression of carbon-related defects at the SiO2/SiC interface. A further performance improvement was achieved by subsequently employing forming gas annealing at 1200 °C. In particular, a peak field-effect mobility of up to 13 cm2V−1 s−1, 11% of the intrinsic hole mobility, was demonstrated. Moreover, the transistors had a stable threshold voltage up to 200 °C and high immunity against bias-temperature stress, suggesting improved reliability.
影响因子：
4.9
作者：
Okamoto, Dai;Yano, Hiroshi;Fuyuki, Takashi
通讯作者：
Fuyuki, Takashi
DOI：
10.1143/jjap.44.1213
发表时间：
2005-03-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kimoto, T;Kanzaki, Y;Matsunami, H
通讯作者：
Matsunami, H