Lead iodide perovskite light-emitting field-effect transistor.
Lead iodide perovskite light-emitting field-effect transistor.
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DOI：
10.1038/ncomms8383
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发表时间：
2015-06-25
影响因子：
16.6
通讯作者：
Soci, Cesare
中科院分区：
文献类型：
--
作者：
Chin, Xin Yu;Cortecchia, Daniele;Yin, Jun;Bruno, Annalisa;Soci, Cesare
尽管可溶液处理的有机-无机复合钙钛矿材料在光伏和发光应用中得到了广泛的应用，但由于薄膜制备的多变性和器件性能的历史依赖性，其本征电荷传输参数的测定一直很难确定。在这里，我们表明，通过降低甲铵碘化铅钙钛矿(CH3NH3PbI3)场效应管的工作温度，可以有效地消除与离子传输相关的屏蔽效应。场效应载流子迁移率在200 K以下几乎增加了两个数量级，这与声子散射限制的输运是一致的。在平衡的双极载流子注入下，从晶体管沟道也观察到了依赖于栅极的电致发光，光谱揭示了从四方到正交的相变。CH3NH3PbI3发光场效应晶体管的这一演示为指导材料和太阳能电池优化提供了内在的传输参数，并将推动新的电光器件概念的发展，例如在室温下工作的门控发光二极管和激光器。有机-无机复合钙钛矿材料在光电子领域显示出巨大的应用潜力。在这里，作者创造了溶液处理的碘化铅钙钛矿型发光场效应晶体管，并展示了双极行为和栅辅助电致发光。
Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature. Hybrid organic–inorganic perovskites have shown great potential for use in optoelectronic applications. Here, the authors create solution-processed lead iodide perovskite light-emitting field-effect transistors and demonstrate both ambipolar behaviour and gate-assisted electroluminescence.
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影响因子：
16.6
作者：
Bergmann, Victor W.;Weber, Stefan A. L.;Berger, Ruediger
通讯作者：
Berger, Ruediger
影响因子：
35
作者：
Heo, Jin Hyuck;Im, Sang Hyuk;Seok, Sang Il
通讯作者：
Seok, Sang Il
影响因子：
5.7
作者：
Deschler, Felix;Price, Michael;Friend, Richard H.
通讯作者：
Friend, Richard H.
影响因子：
41.2
作者：
Capelli, Raffaella;Toffanin, Stefano;Muccini, Michele
通讯作者：
Muccini, Michele
影响因子：
10.8
作者：
Frost JM;Butler KT;Brivio F;Hendon CH;van Schilfgaarde M;Walsh A
通讯作者：
Walsh A