A statistical model of elastic-plastic contact between rough surfaces
A statistical model of elastic-plastic contact between rough surfaces
复制标题
粗糙表面弹塑性接触统计模型
DOI:
10.1139/tcsme-2017-0052
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发表时间:
2019-03
影响因子:
0.9
通讯作者:
Han Qing kai
中科院分区:
文献类型:
--
作者:
Zhao Guang;Li Sheng xiang;Xiong Zhi liang;Gao Wen dong;Han Qing kai
In a mechanical interface, the contact surface topography has an important influence on the contact stiffness. In the contact processes of asperities, elastic-plastic change can lead to discontinuity and lack of smoothness at a critical contact point. The result is a large difference between the elastic-plastic deformation and the actual asperity deformation. Based on Hertz contact theory, the heights of asperities on a rough surface obey a Gaussian distribution. To take into consideration the continuity of elastic-plastic asperity deformation, we divide the elastic-plastic deformation into three stages: pre-elastic-plastic, mid-elastic-plastic, and post-elastic-plastic deformation. This establishes an elastic-plastic contact model of asperity at a continuous critical point. The contact model of a single asperity fits well with the Kogut–Etsion model and the Zhao–Maietta–Chang model, and the variation trend is consistent. At a lower plastic index, the present model coincides with classical models of contact area and contact load. At a higher plastic index, the simulation results of the present model differ from the Greenwood–Williamson model and the Chang–Etsion–Bogy model but are similar to results from the Kogut–Etsion and Zhao–Maietta–Chang models. This study provides a more accurate microscopic contact model for rough surfaces and a theoretical framework for interface design and analysis.
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影响因子:
2.5
作者:
Zhao, YW;Maietta, DM;Chang, L
通讯作者:
Chang, L
影响因子:
6.2
作者:
Jackson, Robert L.;Green, Itzhak
通讯作者:
Green, Itzhak
DOI:
10.1098/rspa.1966.0242
发表时间:
1966-01-01
影响因子:
--
作者:
GREENWOOD, JA;WILLIAMSON, JB
通讯作者:
WILLIAMSON, JB
影响因子:
2.5
作者:
Li Lin;J. Lin
通讯作者:
Li Lin;J. Lin
影响因子:
2.1
作者:
Kogut, L;Etsion, I
通讯作者:
Etsion, I