Grazing Incidence X-ray Diffraction Measurements of Columnar InAs/GaAs Quantum Dot Structures
Grazing Incidence X-ray Diffraction Measurements of Columnar InAs/GaAs Quantum Dot Structures
复制标题
柱状 InAs/GaAs 量子点结构的掠入射 X 射线衍射测量
DOI：
10.1143/jjap.49.04dh07
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发表时间：
2009
影响因子：
1.5
通讯作者：
Y. Kimura
中科院分区：
文献类型：
--
作者：
K. Mukai;Keita Watanabe;Y. Kimura
利用掠入射X射线衍射（GIXD）测量了柱状InAs/GaAs量子点（QD）内部的晶格常数分布及其晶体取向关系。量子点的生长通过堆叠的Stranski-Krastanow（SK）型InAs量子点直接在生长方向上非常薄的GaAs间隔层。我们使用实验室可用的设备，通过GIXD测量评估了面内晶格常数对QD高度的依赖性。我们发现当量子点的高度和直径几乎相等时，量子点顶部和底部的晶格常数几乎相同。随着堆叠的数量增加以生长高QD，QD顶部的晶格常数在[110]方向上变得比在[110]方向上更大，但是这种关系在底部相反。我们认为，GIXD测量与紧凑的设备将有助于快速和有效地开发量子点器件。
The lattice constant distribution inside a columnar InAs/GaAs quantum dot (QD) and its crystal orientation dependence were evaluated by grazing incidence X-ray diffraction (GIXD) measurement. The QDs were grown by stacking Stranski–Krastanow (SK)-type InAs QDs directly in the growth direction with very thin GaAs interval layers. We evaluated the dependence of the in-plane lattice constant on QD height by GIXD measurement using equipment available for laboratories. We found that the lattice constants at the top and bottom of the QDs were almost the same when the height and diameter of the QDs were almost equal. As the number of stacks was increased to grow high QDs, the lattice constant at the QD top became larger in the [110] direction than in the [110] direction, but this relationship was reversed at the bottom. We consider that GIXD measurement with compact equipment will contribute to the swift and efficient development of QD devices.
影响因子：
4
作者：
P. Jayavel;Hirokazu Tanaka;T. Kita;O. Wada;H. Ebe;M. Sugawara;J. Tatebayashi;Y. Arakawa;Y. Nakata;T. Akiyama
通讯作者：
P. Jayavel;Hirokazu Tanaka;T. Kita;O. Wada;H. Ebe;M. Sugawara;J. Tatebayashi;Y. Arakawa;Y. Nakata;T. Akiyama