Effect of thermal annealing on a cuboid DKDP crystal
Effect of thermal annealing on a cuboid DKDP crystal
复制标题
热退火对长方体 DKDP 晶体的影响
DOI：
10.1016/j.jallcom.2019.152812
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发表时间：
2020-03
影响因子：
6.2
通讯作者：
a
中科院分区：
文献类型：
--
作者：
Chen Duanyang;Wang Bin;Wang Hu;Wang Shenghao;Ni Kaizao;Zheng Lili;Zhang Hui;Qi Hongji;Shao Ji;a
为了进一步提高长方体DKDP晶体的质量，对160 °C的热退火效果进行了评价。经过热处理后，x切割样品的HRXRD的对称性大大提高，表明长方体晶体的均匀性得到了改善。在400 ~ 300 nm范围内，退火thg取向样品的透过率明显高于生长thg取向样品。在355 nm处，thg取向样品经过热处理后的透过率由80.4%提高到87.9%。此外，热处理也有利于x切割长方体DKDP晶体在355 nm处的弱吸收性能。x切割样品的平均弱吸收从26.6 ppm降低到12.3 ppm， x切割样品的标准偏差从17.0 ppm降低到4.8 ppm。通过热退火提高了thg取向样品的LID性能，50%概率的LID影响从13.4提高到14.8 J/cm2（@3ns, 355 nm）。此外，低LID阈值缺陷的密度降低了三分之二。以上结果表明，热处理是进一步提高长方体DKDP晶体质量的有效手段。
To further improve the quality of the cuboid DKDP crystal, the effect of thermal annealing at 160 °C were evaluated. After thermal annealing, the symmetry of the HRXRD of the X-cut sample is much better, indicating that the uniformity of the cuboid crystal is improved. The transmittance of annealed THG-oriented sample is obviously higher than the as-grown THG-oriented sample from 400 to 300 nm. At 355 nm, the transmittance of the THG-oriented sample increases from 80.4% to 87.9% after thermal annealing. Besides, thermal annealing is also beneficial to the weak absorption properties at 355 nm of the X-cut cuboid DKDP crystal. The average weak absorption of the X-cut sample is decreased from 26.6 ppm to 12.3 ppm, and the standard deviation of the X-cut sample is decreased from 17.0 ppm to 4.8 ppm after thermal annealing. The LID performance of the THG-oriented sample is improved through thermal annealing, and the fluences corresponding to 50% probability of LID is increased from 13.4 to 14.8 J/cm2(@3ns, 355 nm). Also, the density of the defect with low LID threshold decreases by two-thirds. The above results indicate that thermal annealing is an effective means to further improve the quality of the cuboid DKDP crystal.
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影响因子：
3.5
作者：
Xiaocong Peng;Yuanan Zhao;Yueliang Wang;Guohang Hu;L. Yang;J. Shao
通讯作者：
Xiaocong Peng;Yuanan Zhao;Yueliang Wang;Guohang Hu;L. Yang;J. Shao
影响因子：
2.4
作者：
M. Pommies;D. Damiani;B. Bertussi;J. Capoulade;H. Piombini;J. Natoli;H. Mathis
通讯作者：
M. Pommies;D. Damiani;B. Bertussi;J. Capoulade;H. Piombini;J. Natoli;H. Mathis
影响因子：
1.8
作者：
Xie Xiaoyi;H. Qi;Bin Wang;Hu Wang;Chen Duanyang;J. Shao
通讯作者：
Xie Xiaoyi;H. Qi;Bin Wang;Hu Wang;Chen Duanyang;J. Shao
DOI：
10.1117/12.804297
发表时间：
2008-10
期刊：
--
影响因子：
--
作者：
F. Guillet;B. Bertussi;D. Damiani;L. Lamaignère;A. Surmin;K. Vallé;C. Maunier
通讯作者：
F. Guillet;B. Bertussi;D. Damiani;L. Lamaignère;A. Surmin;K. Vallé;C. Maunier
影响因子：
4.8
作者：
X. Liang;Xinglong Xie;Jun Kang;Qingwei Yang;Hui Wei;Meizhi Sun;Jianqiang Zhu
通讯作者：
X. Liang;Xinglong Xie;Jun Kang;Qingwei Yang;Hui Wei;Meizhi Sun;Jianqiang Zhu