Compact Modeling of Distributed Effects in 2-D Vertical Tunnel FETs and Their Impact on DC and RF Performances
Compact Modeling of Distributed Effects in 2-D Vertical Tunnel FETs and Their Impact on DC and RF Performances
复制标题
二维垂直隧道 FET 中分布效应的紧凑建模及其对直流和射频性能的影响
DOI：
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复制
发表时间：
2017
影响因子：
2.4
通讯作者：
P. Asbeck
中科院分区：
文献类型：
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作者：
Jie Min;P. Asbeck
在本文中，分布效应沿着沟道的2-D垂直隧道场效应晶体管，通过开发一个模型的基础上的一系列单元沿着沟道，其中每一个都包括横向场效应晶体管导电和垂直隧道导电组件。分布式模型表明，这两种传导机制在直流和射频特性之间存在折衷。在直流时，整个器件电流通常受到两种机制之一的限制，这是本文讨论的许多例子中的横向传导。沟道长度对来自这两种机制的电流具有相反的影响，使得通态电流通常可以通过适当选择沟道长度来优化。对于长沟道长度，隧道电流密度沿沟道沿着是高度不均匀的。对于射频应用，横向传导限制会增加总输入电容，特别是 联系我们 与横向TFET设计不同，沟道长度的缩小显著提高了截止频率。该分布式模型在Verilog-A中实现，可直接用于电路仿真。寄生电容和接触电阻也被考虑在实际设计目的评估RF特性。
In this paper, distributed effects along the channel are investigated for 2-D vertical tunnel FETs by developing a model based on a succession of unit cells along the channel, each of which includes lateral FET conduction and vertical tunnel conduction components. The distributed model shows that there are tradeoffs between these two conduction mechanisms in both dc and RF characteristics. At dc, the overall device current is often limited by one of the two mechanisms, which is lateral conduction for many of the examples discussed in this paper. Channel length has opposite effects on current from the two mechanisms, so that ON-state current can typically be optimized by proper choice of channel length. Tunneling current density is highly nonuniform along the channel for long channel length. For RF applications, lateral conduction limitations increase the total input capacitance, particularly $ ext{C}_{ ext {gd}}$ , and can lead to capacitance peaking at specific bias voltages near device turn-on. Unlike lateral TFET design, scaling down the channel length significantly improves the cutoff frequency. The distributed model is implemented inVerilog-A and is directly useful for circuit simulations. Parasitic capacitances and contact resistances are also taken into account when evaluating RF characteristics for practical design purposes.
DOI：
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发表时间：
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期刊：
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影响因子：
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作者：
Chuan Wang;Jun-Chau Chien;Hui Fang;K. Takei;J. Nah;E. Plis;S. Krishna;A. Niknejad;A. Javey-A.-Jav
通讯作者：
Chuan Wang;Jun-Chau Chien;Hui Fang;K. Takei;J. Nah;E. Plis;S. Krishna;A. Niknejad;A. Javey-A.-Jav