Tunable quantum Shubnikov-de Hass oscillations in antiferromagnetic topological semimetal Mn-doped Cd3As2

Tunable quantum Shubnikov-de Hass oscillations in antiferromagnetic topological semimetal Mn-doped Cd3As2
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反铁磁拓扑半金属锰掺杂 Cd3As2 中的可调谐量子 Shubnikov-de Hass 振荡

DOI:
10.1016/j.jmst.2020.11.023
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发表时间:
2021-06
影响因子:
10.9
通讯作者:
Zhang Zhidong
Zhang Zhidong
中科院分区:
材料科学1区
文献类型:
--
作者:
Guo Jie;Zhao Xinguo;Sun Naikun;Xiao Xiaofei;Liu Wei;Zhang Zhidong

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Three-dimensional Dirac semimetal Cd3As2has been considered as an excellent candidate for applications of electronic devices owing to its ultrahigh mobility and air-stability. However, current researches are focused mainly on the use of gate-voltage to control its carrier transport tunability, while the manipulation of transport properties by element-doping is quite limited. Here we report the tunable magneto-transport properties by adjusting Mn-doping in the Cd3As2compound. We find that Mn-element doping has a strong influence on the Fermi level positions, and the Fermi energy approaches to Dirac point with higher Mn-doping. More importantly, the introduction of Mn atoms transforms diamagnetic Cd3As2to antiferromagnetic (Cd, Mn)3As2, which provides an approach to control topological protected Dirac materials by manipulating antiferromagnetic order parameters. The Shubnikov-de Hass oscillation originates from the surface states, and the Landau fan diagram yields a nontrivial Berry phase, indicating the existence of massless Dirac fermions in the (Cd1-xMnx)3As2compounds. Our present results may pave a way for further investigating antiferromagnetic topological Dirac semimetal and expand the potential applications in optoelectronics and spintronics.
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