Electric field control and exploitation in III-N devices
Electric field control and exploitation in III-N devices
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III-N 器件中的电场控制和开发
DOI：
10.1117/12.3012903
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发表时间：
2024
期刊：
影响因子：
--
通讯作者：
Venkatesan, Nivedhita
中科院分区：
文献类型：
--
作者：
Fay, Patrick;Duan, Yu;Zhu, Zhongtao;Venkatesan, Nivedhita
宽（和超宽）带隙III-N半导体对于在高功率水平和恶劣环境下工作的电子器件以及诸如UV检测器的传感器是有希望的。这些材料的前景来自于它们优异的载流子传输特性和在高内部电场下工作的能力的组合。然而，许多电流产生设备没有充分利用材料限制，因此性能低于材料特性预期的基本性能限制。最近的工作极化梯度结构的内部电场缓解，以提高击穿电压的HEMT，具有成本效益的边缘终端战略的垂直功率器件，器件利用碰撞电离和雪崩GaN将被讨论。例如，我们发现使用极化分级可以降低沟道中的峰值电场，增加击穿电压，并改善III-N基HEMT的功率缩放，而无需使用限制高频性能的场板;实验验证的功率增加效率在94 GHz时达到了50%。在垂直器件中，器件的高场操作通常受到边缘效应的限制;我们报告了一种边缘终止策略，该策略提供了一个大的工艺窗口，该窗口可以容忍制造工艺和外延层厚度和掺杂变化，并使稳健的雪崩操作在实践中得以实现。除了提高击穿电压外，利用碰撞电离和雪崩实现器件功能的能力对于雪崩光电二极管和雪崩二极管等负阻振荡器也至关重要。我们报告最近的演示实验测量的负电阻在微波频率从GaN基雪崩二极管，说明直接开发的高场操作的GaN pn结的先进功能。这些方法适合于扩展到超宽带隙III-N材料，特别是用于量子感测和超高功率密度电子器件中的应用。
Wide (and ultra-wide) bandgap III-N semiconductors are promising for electronic devices operating at high power levels and in harsh environments, as well as for sensors such as UV detectors. The promise of these materials derives from a combination of their excellent carrier transport properties and the ability to operate at high internal electric fields. However, many current-generation devices do not fully exploit the material limits, and thus performance is below the fundamental performance limits expected from the material properties. Recent work on polarization-graded structures for internal electric field mitigation to enhance the breakdown voltage in HEMTs, cost-effective edge termination strategies for vertical power devices, and devices exploiting impact ionization and avalanche in GaN will be discussed. For example, we find that the use of polarization-grading can decrease the peak electric field in the channel, increase the breakdown voltage, and improve the power scaling of III-N based HEMTs, without the use of field plates that limit high-frequency performance; experimentally-validated power-added efficiency of 50% at 94 GHz has been achieved. In vertical devices, device high-field operation is often limited by edge effects; we report a strategy for edge termination that provides a large process window that is tolerant of both fabrication processing and epitaxial layer thickness and doping variations, and enables robust avalanche operation to be achieved in practice. In addition to increased breakdown voltage, the ability to harness impact ionization and avalanche for device functionality is also critical for avalanche photodiodes and negative-resistance oscillators such at IMPATT diodes. We report the recent demonstration of experimentally-measured negative resistance at microwave frequencies from GaN-based IMPATT diodes, illustrating direct exploitation of the high-field operation of GaN pn junctions for advanced functionality. These approaches are amenable to extension to ultra-wide bandgap III-N materials, particularly for applications in quantum sensing and ultra-high power density electronics.
具有通过离子注入形成的三区渐变结终端扩展的 1.7kV 垂直 GaN p-n 二极管
DOI：
--
发表时间：
2023
期刊：
e-Prime
影响因子：
--
作者：
Y. Duan;Jingshan Wang;Andy Xie;Zhongtao Zhu;Patrick Fay
通讯作者：
Patrick Fay