Cytoplasmic domains and voltage-dependent potassium channel gating.

Cytoplasmic domains and voltage-dependent potassium channel gating.
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DOI:
10.3389/fphar.2012.00049
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发表时间:
2012
影响因子:
5.6
通讯作者:
de la Peña P
de la Peña P
中科院分区:
医学2区
文献类型:
--
作者:
Barros F;Domínguez P;de la Peña P

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电压依赖性K+通道(Kv通道)的基本结构对应于跨膜蛋白核心,其中存在渗透孔、电压传感组件和门控机构(面向细胞质的门和传感器-门耦合器)。通常,大的蛋白质尾巴附着在这个核心上,悬挂在细胞内部。这些胞质区域对于正常通道功能是必不可少的,并且由于它们对胞质环境的可接近性,构成了通道行为的细胞生理控制的明显靶标。在这里,我们回顾了目前的知识,这些细胞内通道区域的分子组织和它们的作用,在设置和控制千伏电压依赖性门控特性。这包括它们对Kv快速/N型失活以及对Shaker样和eag型Kv通道的激活/失活门控的影响。还考虑了一些说明性的例子,这些胞质结构域的相关性确定的可能性调制的KV通道门控的细胞成分。
The basic architecture of the voltage-dependent K+ channels (Kv channels) corresponds to a transmembrane protein core in which the permeation pore, the voltage-sensing components and the gating machinery (cytoplasmic facing gate and sensor–gate coupler) reside. Usually, large protein tails are attached to this core, hanging toward the inside of the cell. These cytoplasmic regions are essential for normal channel function and, due to their accessibility to the cytoplasmic environment, constitute obvious targets for cell-physiological control of channel behavior. Here we review the present knowledge about the molecular organization of these intracellular channel regions and their role in both setting and controlling Kv voltage-dependent gating properties. This includes the influence that they exert on Kv rapid/N-type inactivation and on activation/deactivation gating of Shaker-like and eag-type Kv channels. Some illustrative examples about the relevance of these cytoplasmic domains determining the possibilities for modulation of Kv channel gating by cellular components are also considered.
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