Common Themes in ther Epitaxial Growth of Oxides on Semiconductors
Common Themes in ther Epitaxial Growth of Oxides on Semiconductors
复制标题
半导体上氧化物外延生长的共同主题
DOI：
10.1557/proc-341-73
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
J. Speck
中科院分区：
文献类型：
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作者：
E. Tarsa;K. McCormick;J. Speck
对Si和III-V半导体上的定向氧化物的生长的综述提供了对氧化物/半导体外延的一些共同主题的洞察。外延的性质和成功可归因于四个主要因素：（i）半导体表面制备;（ii）氧化物/半导体反应热力学;（iii）表面和界面极性;以及（iv）结构匹配（晶格匹配、热膨胀和对称性）。半导体表面制备控制着诸如MgO/GaAs和In 2 O3/InAs系统的外延的初始阶段。在这些情况下，外延发展取决于生长之前是否存在原生氧化物层。化学反应也可以影响外延过程，如在Si上生长氧化钆所示。通常，外延的初始阶段反映了所需氧化物相的形成、半导体的氧化和中间相（例如硅化物和硅酸盐）的形成之间的热力学竞争。选择的二元和三元氧化物与Si和GaAs的可能的反应的分析。表面能和界面能在决定具有极性低指数面的氧化物的形态和取向方面也起着重要作用，如萤石和相关方铁锰矿氧化物如CeO 2、In 2 O 3和Y 2 O 3的生长所示。氧化物和半导体之间的外延关系可以根据直接晶格匹配或更高阶外延来合理化。
A review of the growth of oriented oxides on Si and Ill-V semiconductors provides insight into some of the common themes of oxide/semiconductor epitaxy. The nature and success of the epitaxy can be attributed to four primary factors: (i) semiconductor surface preparation; (ii) oxide/semiconductor reaction thermodynamics; (iii) surface and interfacial polarity; and (iv) structural matching (lattice matching, thermal expansion, and symmetry). Semiconductor surface preparation governs the initial stages of epitaxy for systems such as MgO/GaAs and In 2 O 3 /InAs. In these cases, the epitaxial development depends on the presence or absence of a native oxide layer prior to growth. Chemical reaction can also influence the epitaxial process, as is illustrated in the growth of gadolinium oxide on Si. In general, the initial stages of epitaxy reflect a thermodynamic competition between the formation of the desired oxide phase, oxidation of the semiconductor, and formation of intermediate phases such as silicides and silicates. An analysis of possible reactions is presented for selected binary and ternary oxides with Si and GaAs. Surface and interfacial energy can also play an important role in determining the morphology and orientation of oxides having polar low-index faces, as illustrated in the growth of fluorite and related bixbyite oxides such as CeO 2 , In 2 O 3 and Y 2 O 3 . The epitaxial relationships between the oxide and semiconductor may be rationalized in terms of either direct lattice matching or higher order epitaxy.
DOI：
10.1007/bf01303701
发表时间：
1986-01-01
期刊：
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER
影响因子：
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作者：
BEDNORZ, JG;MULLER, KA
通讯作者：
MULLER, KA
氢封端Si(111)衬底上MBE生长β-FeSi_2外延薄膜
DOI：
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发表时间：
--
期刊：
J.Cryst.Growth (印刷中)
影响因子：
--
作者：
S.Y.Ji;et al.
通讯作者：
et al.