Two-Step Forming Process in Planar-Type Cu2O-Based Resistive Switching Devices
Two-Step Forming Process in Planar-Type Cu2O-Based Resistive Switching Devices
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平面型 Cu2O 基电阻开关器件的两步成型工艺
DOI：
10.1143/apex.4.051801
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发表时间：
2011
影响因子：
2.3
通讯作者：
K. Kyuno
中科院分区：
文献类型：
--
作者：
Kazunori Suzuki;Norihide Igarashi;K. Kyuno
研究了平面型Cu 2 O基阻变器件的形成工艺。结果发现，两个形成过程中发生串联，并直接确认每个形成过程后，使用透射电子显微镜的Cu丝的存在。在这些过程中，通过光学显微镜观察表面的时间演化。第一个过程伴随着Cu 2 O表面的氧化，并在表面以下约15 µm处产生细丝;第二个过程涉及熔化电极之间的区域，并在表面以下约1 µm处产生新的细丝。
The forming process in planar-type Cu2O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu2O surface, and the filament is created ∼15 µm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 µm below the surface.
影响因子：
1.5
作者：
Fujiwara, Kohei;Nemoto, Takumi;Takagi, Hidenori
通讯作者：
Takagi, Hidenori