A photoemission study of passivated silicon surfaces produced by etching in solutions of HF
A photoemission study of passivated silicon surfaces produced by etching in solutions of HF
复制标题
在 HF 溶液中蚀刻产生的钝化硅表面的光发射研究
DOI：
10.1088/0268-1242/4/10/003
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发表时间：
1989
影响因子：
1.9
通讯作者：
R. H. Williams
中科院分区：
文献类型：
--
作者：
J. Thornton;R. H. Williams
用光电子能谱和LEED研究了在氢氟酸溶液中腐蚀产生的氢端基硅表面。他们被发现非常没有污染，局部有序和电钝化。通过在(520+或-10)℃的超高真空中进行热处理，氢可以从(100)表面去除。在该温度下，表面的初始(1*1)结构转变为双畴(2*1)重构，费米能级被表面态钉扎。研究了残留污染与刻蚀参数的关系，如时间、浓度和样品的晶体取向，以及氢化物表面在不同环境中的降解。这表明表面的污染程度对刻蚀过程很敏感，但如果适当注意，5%的非水HF溶液可以提供最佳的刻蚀。
Hydrogen-terminated silicon surfaces produced by etching in solutions of HF have been studied using photoelectron spectroscopy and LEED. They have been found to be remarkably free from contamination, locally ordered and electrically passivated. The hydrogen may be removed from the (100) surface by annealing in UHV at (520+or-10) degrees C. At that temperature, the initial (1*1) structure of the surface changes to a two domain (2*1) reconstruction and the Fermi level becomes pinned by surface states. The relationship between residual contamination and etching parameters such as time, concentration and crystallographic orientation of the sample has been examined, together with the degradation of the hydride surface with exposure to various environments. This has shown that the contamination levels of the surface are sensitive to etching procedure, but with suitable care, a 5% non-aqueous HF solution provides the optimum etch.
DOI：
10.1116/1.575980
发表时间：
1989-05-01
期刊：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
影响因子：
--
作者：
CHABAL, YJ;HIGASHI, GS;BURROWS, VA
通讯作者：
BURROWS, VA