Multi-step Scanning Probe Lithography (SPL) on calixarene with overlay alignment
Multi-step Scanning Probe Lithography (SPL) on calixarene with overlay alignment
复制标题
具有重叠对准的杯芳烃上的多步扫描探针光刻 (SPL)
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
I. Rangelow
中科院分区：
文献类型：
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作者：
M. Kaestner;I. Rangelow
为了继续缩小纳米电子元件的规模，需要新的光刻方法。杯芳烃分子抗蚀剂的直接，正性光刻扫描探针技术代表了一个很有前途的替代易于使用的亚10纳米掩模无光刻。在本文中，我们展示了使用相同的纳米探针的闭环基于尖端的纳米光刻：（i）用于图案重叠对准的AFM预成像;（ii）应用高度受限的无显影去除过程将特征直接写入杯芳烃分子抗蚀剂中;以及（iii）AFM后成像作为最终的原位检查。此外，我们展示了并行写入能力，采用多纳米尖端探针。通过使用这些方法，我们可以大大提高杯芳烃分子抗蚀剂的吸引力，作为无显影，高分辨率的抗蚀剂材料的扫描探针光刻（SPL）。
To keep on with scaling down of nanoelectronic components novel lithographic approaches are required. The direct, positive-tone lithography of calixarene molecular resists by scanning probe techniques represents a promising alternative for ease-of-use sub-10 nm mask-less lithography. Herein, we demonstrate a closed loop tip-based nanolithography using the same nanoprobe for: (i) AFM pre-imaging for pattern overlay alignment; (ii) direct writing of features into calixarene molecular resist applying a highly confined, development-less removal process; and (iii) AFM post-imaging as final in-situ inspection. In addition, we demonstrate parallel writing capabilities by employing multi nano-tip probes. By using these methods we can drastically enhance the attractiveness of calixarene molecular resist as development-less, high resolution resist material for Scanning Probe Lithography (SPL).
影响因子：
38.3
作者：
Fenwick, Oliver;Bozec, Laurent;Cacialli, Franco
通讯作者：
Cacialli, Franco