Temperature dependent phonon evolutions and optical properties of highly c-axis oriented CuGaO2 semiconductor films grown by the sol-gel method
Temperature dependent phonon evolutions and optical properties of highly c-axis oriented CuGaO2 semiconductor films grown by the sol-gel method
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溶胶-凝胶法生长的高度 c 轴取向 CuGaO2 半导体薄膜的温度依赖性声子演化和光学特性
DOI：
10.1063/1.3641477
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发表时间：
2011-09
影响因子：
4
通讯作者：
Chu, J. H.
中科院分区：
文献类型：
--
作者：
Han, M. J.;Jiang, K.;Zhang, J. Z.;Li, Y. W.;Hu, Z. G.;Chu, J. H.
采用溶胶-凝胶法在蓝宝石衬底上制备了透明导电CuGaO 2氧化物薄膜。在可见光区获得了高度c轴取向和光学透明性（60%-80%）。这表明，由于晶格的热膨胀和非谐声子耦合，A 1 g声子模随温度移动约20 cm−1。此外，温度依赖性的介电函数已被调查和三个电子跃迁位于约1.05，2.67，和3.99 eV的可以被唯一分配。结果表明，CuGaO 2薄膜的光学带隙随温度的升高而减小，这主要源于电子-声子相互作用.
Transparent conductive CuGaO2 oxide films were prepared on sapphire substrates by the sol-gel method. The highly c-axis orientation and optical transparency (60%-80%) in the visible region were obtained. It indicates that the A 1 g phonon mode shifts about 20 cm−1 with the temperature due to the thermal expansion of the lattice and anharmonic phonon coupling. Moreover, temperature-dependent dielectric function has been investigated and three electronic transitions located at about 1.05, 2.67, and 3.99 eV can be uniquely assigned. It was found that the optical band gap of the CuGaO2film decreases with the temperature, which mainly originated from the electron-phonon interactions.
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影响因子：
3.3
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通讯作者：
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影响因子：
4
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