Octadecyltrichlorosilane self-assembled-monolayer islands as a self-patterned-mask for HF etching of SiO2 on Si
Octadecyltrichlorosilane self-assembled-monolayer islands as a self-patterned-mask for HF etching of SiO2 on Si
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十八烷基三氯硅烷自组装单层岛作为自图案掩模用于 Si 上 SiO2 的 HF 蚀刻
DOI：
10.1116/1.581142
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
Y. Nishioka
中科院分区：
文献类型：
--
作者：
T. Komeda;Kenji Namba;Y. Nishioka
通过原子力显微镜 (AFM) 研究了在亚单层区域 SiO2 上生长的十八烷基三氯硅烷 (OTS)、自组装单层 (SAM)，并将其进一步应用于 SiO2 表征技术。 OTS-SAM在其亚单层区域形成特征性的枝晶状岛，其形状和尺寸显着取决于在700-1100℃范围内的不同温度下形成的SiO2的表面粗糙度。此外，OTS-SAM 岛作为 HF 蚀刻的自图案化掩模具有实际用途。当被 OTS-SAM 岛覆盖的氧化硅晶片浸入 HF 中时，未被岛覆盖的区域中的 SiO2 被选择性去除。该技术已成功应用于 AFM 超薄（<50 A）区域的 SiO2 厚度精确测量。此外，该技术还可以同时观察SiO2表面和SiO2/Si界面的形貌。结果首次证明了SiO2表面和SiO2/Si界面上台阶的连续性，表明...
Octadecyltrichlorosilane (OTS), self-assembled-monolayer (SAM) grown on SiO2 in the submonolayer region is investigated by atomic force microscope (AFM), which is further applied to SiO2 characterizations technique. OTS-SAM forms characteristic dendrite-shaped islands in its submonolayer region, whose shape and size significantly depend on the surface roughness of SiO2 formed at different temperatures in the range of 700–1100 °C. Moreover, OTS-SAM islands have practical usefulness as a self-patterned-mask for HF etching. When an oxidized Si wafer covered by OTS-SAM islands is dipped into HF, SiO2 in the area uncovered by the islands is selectively removed. This technique is successfully applied for the precise SiO2 thickness measurement in ultrathin (<50 A) regions by AFM. In addition, this technique enables a simultaneous observation of the morphologies of SiO2 surface and SiO2/Si interface. The result shows, for the first time, the continuity of the steps on SiO2 surface and SiO2/Si interface, indicatin...
影响因子：
4
作者：
HIGASHI, GS;CHABAL, YJ;RAGHAVACHARI, K
通讯作者：
RAGHAVACHARI, K