Thermographic investigation of the effect of plasma exposure on the surface of a MAST upgrade divertor tile in Magnum-PSI
Thermographic investigation of the effect of plasma exposure on the surface of a MAST upgrade divertor tile in Magnum-PSI
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Magnum-PSI 中 MAST 升级偏滤器瓦片表面等离子体暴露影响的热成像研究
DOI：
10.1016/j.nme.2020.100832
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发表时间：
2020
影响因子：
2.6
通讯作者：
Dunn M
中科院分区：
文献类型：
--
作者：
Dunn M
未来聚变装置面临的问题之一是偏滤器靶的高热负荷。替代的偏滤器可以促进分离、通量膨胀和耗散机制，以减轻这些热负荷。已在包括TCV和DIII-D在内的几种器械中对其进行了研究，并将在MAST-U上进行研究。为了评估它们的有效性，这些机器中需要精确的目标热通量和功率平衡测量。红外（IR）热成像是一种广泛使用的技术，以确定目标的热通量，但容易受到表面效应和碳壁机器的发射率。在这项工作中，等离子体暴露对石墨的影响进行了评估，以了解MAST-U中可能发生的情况。将MAST-U上使用的细颗粒石墨样品暴露于30分钟的等离子体暴露，密度ne = 6× 1018 m− 3，温度Te = 0.08 eV，通过汤姆逊散射测量。在这些脉冲期间，通过中波IR照相机测量温度，并且可以看到在等离子体暴露的3小时过程中温度降低了1070 ° C。高温计测量表明，红外摄像机的数据是由表面发射率的变化的影响。轮廓测定法证实，瓷砖中心的石墨侵蚀深度为100 µm，更远处的沉积区域更大，达到140 µm的材料。
One of the issues faced by future fusion devices will be high divertor target heat loads. Alternative divertors can promote detachment, flux expansion and dissipation mechanisms to mitigate these heat loads. They have been investigated in several devices including TCV and DIII-D, and will be investigated on MAST-U. To evaluate their effectiveness, accurate target heat flux and power balance measurements are required in these machines. Infrared (IR) thermography is a widely used technique to determine the target heat flux, but is susceptible to surface effects and emissivity in carbon-walled machines. In this work, the effect of plasma exposure on graphite is assessed to understand what may happen in MAST-U. A sample of fine grain graphite, as used on MAST-U, is exposed to 30min plasma exposures, with density n e= 6× 1018 m− 3 and temperature T e= 0.08 eV as measured by Thomson scattering. During these pulses, the temperature is measured by a medium wave IR camera and is seen to decrease by≈ 70° C over the course of 3h of plasma exposure. Pyrometer measurements suggest that the IR camera data is affected by a change in the surface emissivity. Profilometry confirms erosion of graphite at the tile centre to a depth of≈ 100 µm, and a larger region of deposition further out, amounting to≈ 40 µm of material.
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