Phosphine-Free Synthesis and Characterization of Cubic-Phase Cu2SnTe3 Nanocrystals with Optical and Optoelectronic Properties
Phosphine-Free Synthesis and Characterization of Cubic-Phase Cu2SnTe3 Nanocrystals with Optical and Optoelectronic Properties
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具有光学和光电性能的立方相 Cu2SnTe3 纳米晶的无磷合成和表征
DOI:
10.1021/acs.chemmater.5b02743
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发表时间:
2015-09
影响因子:
8.6
通讯作者:
Yang, Qing
中科院分区:
文献类型:
--
作者:
Wang, Wenliang;Feng, Wenling;Ding, Tao;Yang, Qing
In recent years, copper-based multicomponent chalcogenide semiconducting NCs have received considerable attention owing to their size-and composition-tunable properties and applications in solar cell, 1, 2 thermoelectric devices. 3− 5 In particular, among these colloidal semiconductor NCs, the copper-based I2− IV− VI3 ternary compounds, such as Cu2SnS3, Cu2GeSe3, and Cu2SnSe3 due to their tunable band gap, high optical absorption coefficients, and hole mobilities 6− 8 have been intensively investigated and applied in lithium ion battery 9 and photovoltaic devices. 7 However, in comparison with Cu2MX3 (M= Ge, Sn, X= S, Se), synthesis of monodisperse and uniform Cu2SnTe3 NCs still remains a big challenge, and therefore their further characterization and application are also restricted. A possible reason may lie in the lack of simple and benign methods that employed reactivity-matching precursors for the growth of the homogeneous Cu2SnTe3 NCs. To the best of our knowledge, there is no report on the preparation of Cu2SnTe3 NCs performed by solution-based routes. Although Cu2SnTe3 crystals have been synthesized in high temperature solid-state reaction, 10, 11 this energy-intensive and time-consuming method usually resulted in products with irregular, large size and size distribution and uncontrolled aggregate formation, which would limit their potential applications. On the other hand, the solution synthesis of different kinds of metal telluride NCs mainly relies on air-sensitive alkylphosphines (such as TOP or TBP), 1, 12− 14 which is harmful to the environment. Thus, to explore a new environmentally benign method for synthesizing high-quality Cu2SnTe3 NCs with monodisperse and uniform size is highly desirable. Fortunately, recent progress reveals that the hot-injection synthesis can act as a versatile methodology for the preparation of high-quality NCs with monodisperse and uniform size. 1, 13− 16 This encourages us to synthesize Cu2SnTe3 NCs via such a hot-injection strategy. Herein, we have developed a facile, green, mild, and costeffective route to synthesize Cu2SnTe3 NCs for the first time. In our new strategy, the Te precursor is prepared by dissolving TeO2 in 1-dodecanethiol, avoiding the use of expensive and toxic alkylphosphines, which is rapidly injected into Cu− Sn complex solution under argon atmosphere at 210 C to produce Cu2SnTe3 NCs (Supporting Information for details). It is well-known that one of the most distinctive features of the hot-injection method is the separation of the nanocrystal nucleation and growth stages. 17− 19 Taking advantage of these merits, as a result, the as-obtained Cu2SnTe3 NCs are nearly monodisperse and uniform size with an average diameter of around 25 nm (Figure S1). This new synthetic strategy is expected to open new avenues for the development of a versatile route for other metal telluride nanostructures. The phase, composition, and oxidation states of the synthesized Cu2SnTe3 NCs are determined by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) measurements. As displayed in Figure 1 a, the XRD peaks of the sample at 25.7, 29.7, 42.6, 50.2, 61.6, 67.8, and 77.6 are in good agreement with (111),(200),(220),(311),(400),(331), and (422) planes of the cubic-structured Cu2SnTe3 (JCPDS No. 89-2881, cubic, a= b= c= 6.04 Å), 20 respectively. The corresponding schematic crystal structure of cubic Cu2SnTe3 NCs is displayed in Figure 1 b. It is worth noting that Cu+ and Sn4+ ions occupy the same position. The EDS spectrum shows the presence of only Cu, Sn, Te, Mo, and C and the existence of …
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影响因子:
10.8
作者:
Zhang, Genqiang;Kirk, Benjamin;Wu, Yue
通讯作者:
Wu, Yue
影响因子:
3.7
作者:
J. Cho;Xun Shi;J. Salvador;G. Meisner;Jihui Yang;Hsin Wang;A. Wereszczak;Xiaoyuan Zhou;C. U
通讯作者:
J. Cho;Xun Shi;J. Salvador;G. Meisner;Jihui Yang;Hsin Wang;A. Wereszczak;Xiaoyuan Zhou;C. U
影响因子:
15
作者:
Li, Hongbo;Brescia, Rosaria;Moreels, Iwan
通讯作者:
Moreels, Iwan
影响因子:
15
作者:
Li, Wenhua;Zamani, Reza;Cabot, Andreu
通讯作者:
Cabot, Andreu
影响因子:
15
作者:
MURRAY, CB;NORRIS, DJ;BAWENDI, MG
通讯作者:
BAWENDI, MG