Fractional Chern insulator edges and layer-resolved lattice contacts
Fractional Chern insulator edges and layer-resolved lattice contacts
复制标题
分数陈绝缘体边缘和层分辨晶格接触
DOI:
10.1103/physrevb.99.081114
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发表时间:
2019
影响因子:
3.7
通讯作者:
Zaletel, Michael P.
中科院分区:
文献类型:
--
作者:
Knapp, Christina;Spanton, Eric M.;Young, Andrea F.;Nayak, Chetan;Zaletel, Michael P.
Fractional Chern insulators (FCIs) realized in fractional quantum Hall systems subject to a periodic potential are topological phases of matter for which space group symmetries play an important role. In particular, lattice dislocations in an FCI can host non-Abelian topological defects, known as genons. Genons can increase the ground-state degeneracy of the system and are thus potentially useful for topological quantum computing. In this work, we study FCI edges and how they can be used to detect genons. We find that translation symmetry can impose a quantized momentum difference between the edge electrons of a partially filled Chern band. We proposelayer-resolved lattice contacts, which utilize this momentum difference to selectively contact a particular FCI edge electron. The relative current between FCI edge electrons can then be used to detect the presence of genons in the bulk FCI. Recent experiments have demonstrated graphene is a viable platform to study FCI physics. We describe how the lattice contacts proposed here could be implemented in graphene subject to an artificial lattice, thereby outlining a path forward for experimental dectection of non-Abelian topological defects.
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DOI:
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