Corona Charge in SiO2: Kinetics and Surface Passivation for High Efficiency Silicon Solar Cells☆
Corona Charge in SiO2: Kinetics and Surface Passivation for High Efficiency Silicon Solar Cells☆
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SiO2 中的电晕电荷：高效硅太阳能电池的动力学和表面钝化☆
DOI：
10.1016/j.egypro.2016.07.090
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
P. Wilshaw
中科院分区：
文献类型：
--
作者：
R. S. Bonilla;N. Jennison;D. Clayton;Katherine A. Collett;L. Rands;P. Wilshaw
这份手稿提出了一种方法，通过该方法，电容电压测量可以与开尔文探针测量结合使用，以计算电介质层内的电荷的位置。提出了一个一级动力学模型，描述了电晕放电沉积后SiO2薄膜中电荷的输运过程。已观察到电荷迁移到氧化膜中的速率限制步骤是从表面（空气-SiO2界面）注入电荷。电荷优先位于空气-SiO2和SiO2 -Si界面，其注入SiO2的特征在于具有~ 50 meV的激活能。在这项工作中，电晕电荷沉积产生的SRV < 2.7 cm/s和J 01 < 12 fA/cm ^2，这是在高效率硅太阳能电池的要求之内。这些结果有助于了解电晕电荷与二氧化硅的相互作用，以期其潜在的应用程序作为一个外在的方法钝化高效的硅太阳能电池。
This manuscript presents a method by which capacitance-voltage measurements can be used in conjunction with Kelvin-probe measurements to calculate the location of charge within a dielectric layer. A first order kinetic model for the transport of charge into SiO 2 films after exposure to corona charge deposition is proposed. The rate limiting step for charge migration into oxide films has been observed to be the injection of charge from the surface (air -SiO2 interface). The charge lies preferentially at the air-SiO 2 and SiO2 -Si interfaces, and its injection into SiO2 has been characterized as having an activation energy of ~ 50 meV. In this work, corona charge deposition has produced SRV < 2.7 cm/s and J 01 < 12 fA/cm^2 which is within the requirements of high efficiency silicon solar cells. These results contribute to the understanding of corona charge interaction with SiO2 with a view to its potential application as an extrinsic method of passivation for highly efficient silicon solar cells.
背接触硅太阳能电池的稳定、外在场效应钝化
DOI：
10.4028/www.scientific.net/ssp.242.67
发表时间：
2015
期刊：
Solid State Phenomena
影响因子：
--
作者：
Bonilla R
通讯作者：
Bonilla R