Steep switching in trimmed-gate tunnel FET
Steep switching in trimmed-gate tunnel FET
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修整栅极隧道 FET 中的陡峭开关
DOI：
10.1063/1.5043570
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发表时间：
2018
期刊：
影响因子：
1.6
通讯作者：
K. Fukuda
中科院分区：
文献类型：
--
作者：
H. Asai;T. Mori;T. Matsukawa;J. Hattori;K. Endo;K. Fukuda
我们提出了一种具有修剪栅极(TG)结构的隧道场效应晶体管(TFET)，它显著改善了亚阈值摆幅(SS)。TG结构将不必要的长带间隧道(BTBT)路径截断到常规TFET中通常出现的“沟道”，并实现从短BTBT路径到导通状态的突然切换。我们的模拟表明，在双栅极硅沟道结构中，TG-TFET可以实现非常陡峭的SS，小于10 mV/ten。在0.35V的工作电压范围内，TG结构还将离子/IOFF值提高到高于理想MOSFET的值。陡峭开关的机制是基于对栅极静电控制的简单修改；因此，除了展示的TFET之外，TG结构还普遍适用于许多类型的TFET。我们提出了一种具有修剪栅极(TG)结构的隧道场效应晶体管(TFET)，显著改善了亚阈值摆幅(SS)。TG结构将不必要的长带间隧道(BTBT)路径截断到常规TFET中通常出现的“沟道”，并实现从短BTBT路径到导通状态的突然切换。我们的模拟表明，在双栅极硅沟道结构中，TG-TFET可以实现非常陡峭的SS，小于10 mV/ten。在高达0.35V的工作电压范围内，TG结构还将离子/IOFF值提高到高于理想MOSFET的值。陡峭开关的机理是基于对栅极静电控制的简单修改；因此，除了展示的TFET之外，TG结构还普遍适用于许多类型的TFET。
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which normally appear in a conventional TFET, and realize a sudden switching to the on-state arising from a short BTBT path. Our simulations demonstrate that the TG-TFET can achieve an extremely steep SS, less than 10 mV/decade, in the double-gated Si-channel configuration. The TG structure also improves the ratio ION/IOFF to a value higher than that of ideal MOSFETs in the operation voltage range up to 0.35 V. The mechanism of steep switching is based on a simple modification of the gate electrostatic control; therefore, in addition to the demonstrated TFETs, the TG structure is universally applicable to many types of TFETs.We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which normally appear in a conventional TFET, and realize a sudden switching to the on-state arising from a short BTBT path. Our simulations demonstrate that the TG-TFET can achieve an extremely steep SS, less than 10 mV/decade, in the double-gated Si-channel configuration. The TG structure also improves the ratio ION/IOFF to a value higher than that of ideal MOSFETs in the operation voltage range up to 0.35 V. The mechanism of steep switching is based on a simple modification of the gate electrostatic control; therefore, in addition to the demonstrated TFETs, the TG structure is universally applicable to many types of TFETs.
Si-TFET 中 Al N 等电子陷阱的隧道电流特性；
DOI：
10.1016/j.mssp.2016.11.031
发表时间：
2017
期刊：
Mater. Sci. Semicond. Processing
影响因子：
--
作者：
S.Iizuka;Y.Asayama;T.Nakayama
通讯作者：
T.Nakayama