CdTe surface passivation by electric field induced at the metal-oxide/CdTe interface
CdTe surface passivation by electric field induced at the metal-oxide/CdTe interface
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通过金属氧化物/CdTe 界面感应电场实现 CdTe 表面钝化
DOI：
10.1016/j.solener.2021.07.015
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发表时间：
2021-09
期刊：
影响因子：
6.7
通讯作者：
Wang Deliang
中科院分区：
文献类型：
--
作者：
Wu Lingling;Li Zihan;Wang Dongming;Lei Xunyong;Cai Yanbo;Zeng Hualing;Zhu Peng;Wang Deliang
In this study, three kinds of metal oxide (MOs), namely, V2O5, Al2O3and NiO, were deposited on CdTe thin films to study possible passivation effect on the CdTe surface. Time-resolved photoluminescence (TRPL) measurements were carried out to study the minority carrier lifetime of the MO-coated CdTe and bare CdTe. The results showed that the TRPL decay curves were consisted of a fast and a slow decay process for all samples. For both the bare and NiO-coated CdTe surface, the fast and the slow decay lifetimes were found to be 0.5 and 1.0 ns. While for the Al2O3- and V2O5-coated CdTe, the fast decay lifetime was 0.6 and 0.7 ns, and the slow decay lifetime was 2.1 and 2.4 ns, respectively. CdTe surface defect states with high surface recombination velocity, ~106cm/s, were responsible for the fast decay. The CdTe surface was effectively passivated by a 3-nm-thick V2O5or Al2O3coating layer. The simulation and experimental results indicated that the passivation was ascribed to the electric field effect induced by negative fixed charges in V2O5and Al2O3.
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影响因子：
5.1
作者：
N. Gorji
通讯作者：
N. Gorji
DOI：
10.1016/0168-9002(89)91370-3
发表时间：
1989-11
影响因子：
1.4
作者：
M. Suita;T. Taguchi
通讯作者：
M. Suita;T. Taguchi
影响因子：
3.2
作者：
C. Bridge;P. Dawson;P. Buckle;M. Özsan
通讯作者：
C. Bridge;P. Dawson;P. Buckle;M. Özsan
DOI：
10.1109/pvsc.2014.6925414
发表时间：
2014-06
期刊：
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
影响因子：
--
作者：
Tao Song;A. Kanevce;J. Sites
通讯作者：
Tao Song;A. Kanevce;J. Sites
DOI：
10.1109/pvsc.2012.6317736
发表时间：
2012-06
期刊：
2012 38th IEEE Photovoltaic Specialists Conference
影响因子：
--
作者：
A. Kanevce;D. Kuciauskas;T. Gessert;D. Levi;D. Albin
通讯作者：
A. Kanevce;D. Kuciauskas;T. Gessert;D. Levi;D. Albin