Highly Spin-polarized Full-Heusler Alloy Films and Their Application to Spin-electronics Devices

Highly Spin-polarized Full-Heusler Alloy Films and Their Application to Spin-electronics Devices
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高自旋极化全赫斯勒合金薄膜及其在自旋电子器件中的应用

DOI：
10.3131/jvsj.49.700
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发表时间：
2006
期刊：
Journal of The Vacuum Society of Japan
影响因子：
--
通讯作者：
K. Takanashi
K. Takanashi
中科院分区：
--
文献类型：
--
作者：
K. Yakushiji;K. Takanashi

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综述了近年来半金属全heusler合金薄膜的研究进展及其在自旋电子器件中的应用。高L21结构阶数的Co基全heusler合金制备技术的进步，使其获得比典型过渡金属和合金（Co、CoFe等）更高的自旋极化成为可能。由此产生的隧道磁阻在室温下超过60。我们最近在Co2MnSi - lms的电流垂直面磁阻（CPPGMR）器件上的研究结果也被显示出来。室温下的电阻变面积积（DRA）为19 mQmm2，比之前报道的三层体系大一个数量级，MR比为2.4。高质量的L21 Co2MnSi - lm中存在较大的自旋极化。
The recent development of the study on half-metallic full-Heusler alloy thin ˆlms and their application to spin-electronics devices are reviewed. The progress of preparation technique of Co-based full-Heusler alloy ˆlms with high L21 structural order has made it possible to obtain higher spin-polarization than that of typical transition metals and alloys (Co, CoFe, etc.). Resulting tunnel magnetoresistance in magnetic tunnel junctions exceeds 60 at room temperature. Our recent results on the current-perpendicular-toplane magnetoresistance (CPPGMR) devices with Co2MnSi ˆlms are also shown. The resistance change-area product (DRA) at room temperature was 19 mQmm2, which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 2.4. The enhanced DRA is considered to originate from the large spin polarization in a high-quality L21 Co2MnSi ˆlm.
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使用B2有序Co_2MnAl Heusler合金外延电极的磁隧道结
DOI： --
发表时间： 2006
期刊： Applied Physics Letters 88
影响因子： --
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影响因子： 3.7
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DOI： 10.1143/jjap.42.l419
发表时间： 2003-04-15
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影响因子： --
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"Fabrication of fully epitaxial magnetic tunnel junctions using Co_2MnSi thin film and MgO tunnel barrier"
“利用Co_2MnSi薄膜和MgO隧道势垒制造全外延磁隧道结”
DOI： --
发表时间： 2006
期刊：
影响因子： --
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