Slow light enhanced carrier depletion modulators with 1V drive voltage
Slow light enhanced carrier depletion modulators with 1V drive voltage
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具有 1V 驱动电压的慢光增强型载流子耗尽调制器
DOI：
10.1117/12.922710
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Brimont A
中科院分区：
文献类型：
--
作者：
Brimont A
慢光光调制器由于其能够在保持类似驱动电压的同时缩小传统的基于脊形波导的载流子耗尽调制器的覆盖区而在硅光子学领域中吸引越来越多的关注。尽管如此，未来光子器件与先进的互补金属氧化物半导体（CMOS）电子器件的集成将需要低至1V的驱动电压。在这里，我们证明了慢光的使用提供了一个有吸引力的解决方案，以减少基于载流子耗尽的马赫-曾德尔调制器的驱动功率，使它们满足未来CMOS电光收发器的消耗要求。初步测试结果表明，在1V驱动电压下，1 mm长的慢光器件的数据传输速率为5Gbit/s，消光比为5.7dB，插入损耗为12 dB。进一步的测量表明，在维持接近当前CMOS要求的驱动电压的同时，可以实现更高的传输速度。
Slow light optical modulators are attracting ever more attention in the field of silicon photonics owing to their capacity to shrink the footprint of conventional rib waveguide based carrier depletion modulators while maintaining similar drive voltages. Nonetheless, the integration of future photonics components with advanced complementary-metal-oxide-semiconductor (CMOS) electronics will require drive voltages as low as 1V. Here, we demonstrate that the use of slow light provides an attractive solution to reduce the driving power of carrier depletion-based Mach-Zehnder modulators so that they fulfill the consumption requirements of future CMOS electro-photonics transceivers. Preliminary characterization results show that our 1mm-long slow light device features a data transmission rate of 5 Gbit/s with ~5.7 dB extinction ratio under a 1V drive voltage with 12dB insertion loss. Further measurements show that higher transmission speeds are achievable while sustaining the drive voltage close to current CMOS requirements.
通过慢光传播增强基于载流子耗尽的硅电光调制器的性能
DOI：
10.1109/group4.2011.6053829
发表时间：
2011
期刊：
8th IEEE International Conference on Group IV Photonics
影响因子：
--
作者：
A. Brimont;D. Thomson;P. Sanchis;J. Herrera;F. Gardes;J. Fédéli;G. Reed;J. Marti
通讯作者：
J. Marti