Proton radiation hardness of x-ray SOI pixel sensors with pinned depleted diode structure
Proton radiation hardness of x-ray SOI pixel sensors with pinned depleted diode structure
复制标题
具有钉扎耗尽二极管结构的 X 射线 SOI 像素传感器的质子辐射硬度
DOI：
10.1117/1.jatis.7.3.036001
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Yukumoto Masataka
中科院分区：
文献类型：
--
作者：
Hayashida Mitsuki;Hagino Kouichi;Kohmura Takayoshi;Kitajima Masatoshi;Yarita Keigo;Oono Kenji;Negishi Kousuke;Tsuru Takeshi G.;Tanaka Takaaki;Uchida Hiroyuki;Kayama Kazuho;Kodama Ryota;Mori Koji;Takeda Ayaki;Nishioka Yusuke;Hida Takahiro;Yukumoto Masataka
X射线绝缘体上硅(SOI)像素传感器“XRPIX”正在为下一代X射线天文卫星“FORCE”开发。XRPIX采用SOI工艺制作，使得高阻硅传感器和低阻硅互补金属氧化物半导体(CMOS)电路集成成为可能。每个像素中的CMOS电路都配备了触发功能，允许我们在X射线检测定时仅从具有X射线信号的像素中读出输出。因此，该功能实现了高吞吐量和高时间分辨率，使得能够采用反符合技术来抑制背景。一种名为XRPIX6E的新系列XRPIX采用钉扎耗尽二极管(PDD)结构开发，通过抑制传感器和电路层之间的干扰来提高频谱性能。半导体X射线传感器在空间使用时，由于高能质子的辐射损伤，其光谱性能普遍下降。因此，在空间使用XRPIX之前，有必要评估其光谱性能因辐射损伤而退化的程度。因此，我们首次在千叶国立放射科学研究所的重离子医疗加速器上进行了XRPIX6E的质子辐照实验。我们用总剂量高达40kRad的高能质子辐照XRPIX6E，相当于在轨道上照射了400年。40krad辐照使XRPIX6E的能量分辨率降低了25 ± 3 % ，在5.9keV X射线的全宽半极大处的能量分辨率为260.1 ± 5.6 eV。然而，即使在辐照后，该值也满足力的要求，在6千电子伏特时为300千电子伏特。还发现，与以前的XRPIX设备相比，PDD XRPIX具有更高的抗辐射能力。此外，我们还研究了能量分辨率的下降；结果表明，下降是由于与能量无关的分量的增加，例如读出噪声。
X-ray silicon-on-insulator (SOI) pixel sensors, “XRPIX,” are being developed for the next-generation x-ray astronomical satellite, “FORCE.” The XRPIX is fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si complementary metal oxide semiconductor (CMOS) circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with x-ray signals at the timing of x-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor x-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at Heavy Ion Medical Accelerator in Chiba in the National Institute of Radiological Sciences. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 ± 3 % , yielding an energy resolution of 260.1 ± 5.6 eV at the full-width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
登录
查看更多内容
DOI：
10.1016/j.nima.2012.05.088
发表时间：
2013-01
影响因子：
1.4
作者：
Katsuhiro Hayashi;I. Park;Kyohei Dotsu;I. Ueno;S. Nishino;M. Matsuoka;H. Yasuda;Y. Fukazawa;T. Ohsugi;T. Mizuno;H. Takahashi;M. Ohno;S. Endo;Takaaki Tanaka;H. Tajima;M. Kokubun;S. Watanabe;Tadayuki Takahashi;K. Nakazawa;Y. Uchihori;H. Kitamura
通讯作者：
Katsuhiro Hayashi;I. Park;Kyohei Dotsu;I. Ueno;S. Nishino;M. Matsuoka;H. Yasuda;Y. Fukazawa;T. Ohsugi;T. Mizuno;H. Takahashi;M. Ohno;S. Endo;Takaaki Tanaka;H. Tajima;M. Kokubun;S. Watanabe;Tadayuki Takahashi;K. Nakazawa;Y. Uchihori;H. Kitamura
国际空间站柳林-E094仪器对SAA辐射分布的观测
影响因子：
2.6
作者：
T. Dachev;W. Atwell;E. Semones;B. Tomov;B. Reddell
通讯作者：
B. Reddell
朱雀X射线成像光谱仪间隔排电荷注入CTI校正新方法
DOI：
--
发表时间：
2009
期刊：
PASJ 61S
影响因子：
--
作者：
Uchiyama;H;Ozawa;M;Matsumoto;H;Tsuru;T;G;Koyama;K;Kimura;M;Uchida;H;Nakajima;H;Hayashida;K;Tsunemi;H;11 coauthors
通讯作者：
11 coauthors
用于未来 X 射线天文卫星的事件驱动型 SOI 像素传感器
DOI：
--
发表时间：
2016
期刊：
影响因子：
--
作者：
Tsuru;Takeshi G.; Matsumura;Hideaki; Takeda;Ayaki; Tanaka;Takaaki; Nakashima;Shinya; Arai;Yasuo; Mori;Koji; Takenaka;Ryota; Nishioka;Yusuke; Kohmura;Takayoshi; Hatsui;Takaki; Kameshima;Takashi; Ozaki;Kyosuke; Kohmura;Yoshiki; et al.;T.G.Tsuru
通讯作者：
T.G.Tsuru
Masabumi Nishikawa.：物理研究中的核仪器和方法 A. (1989)
DOI：
--
发表时间：
--
期刊：
影响因子：
--
作者：
通讯作者：
--