The large response current of a vacuum pressure sensor based on a vertically-aligned ZnO nanowires array
The large response current of a vacuum pressure sensor based on a vertically-aligned ZnO nanowires array
复制标题
基于垂直排列ZnO纳米线阵列的真空压力传感器的大响应电流
DOI:
10.1039/c6ra18433b
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发表时间:
2016-12
期刊:
影响因子:
3.9
通讯作者:
Zhang Tong
中科院分区:
文献类型:
--
作者:
Wang Ding;Zheng Xuejun;Cao Xinchao;Wang Xianying;Zhang Tong
A vertically-aligned ZnO nanowires (VA-ZnO-NWs) array was prepared via chemical vapor deposition, which was used to fabricate a vacuum pressure sensor and its sensitive characteristics were measured using a semiconductor parameter tester. The response currents are larger than those of the previous sensors based on ZnO nanobelts (NBs) film, ZnO single NW and p-ZnO nanowires. There is a linear relationship in the resistance–vacuum pressure curve of the logarithmic coordinate system. The measurement of the vacuum pressure is in the range of 10−5 to 103 mbar and the power consumption is in the range of 102 to 103 μW, which is wider and much lower, respectively, compared with the traditional vacuum pressure sensors. The current–time curve of the vacuum pressure variation was used to study the response speed and repeatability. The sensitive mechanism is discussed using oxygen chemisorption and the unique NWs array structure to understand the large response current and high sensitivity of the VA-ZnO-NWs array sensor. The adsorbed oxygen on the large surface area of the ZnO NWs can form an electron depletion layer on the surface, and the unique NWs array structure with large surface-to-volume ratio provides abundant carrier channels for electronic transport.
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影响因子:
1.6
作者:
Schlenker, E.;Bakin, A.;Waag, A.
通讯作者:
Waag, A.
影响因子:
4.3
作者:
J. She;J. Yeow
通讯作者:
J. She;J. Yeow
影响因子:
5.1
作者:
Li Jinfeng;Tang Zhen-an
通讯作者:
Li Jinfeng;Tang Zhen-an
DOI:
10.1002/chin.201234191
发表时间:
2012-08
期刊:
ChemInform
影响因子:
--
作者:
Y. Long;Miao Yu;B. Sun;C. Gu;Zhi-Yong Fan
通讯作者:
Y. Long;Miao Yu;B. Sun;C. Gu;Zhi-Yong Fan
影响因子:
10.8
作者:
Jie, J. S.;Zhang, W. J.;Lee, S. T.
通讯作者:
Lee, S. T.