Second-phase-induced fluorescence quenching in non-equivalent substituted red phosphors.
Second-phase-induced fluorescence quenching in non-equivalent substituted red phosphors.
复制标题
非等价取代红色荧光粉中第二相诱导的荧光猝灭。
作者：
浓度猝灭通常源于基质中均匀分布的发光中心之间的严重能量迁移，是影响材料发光性能的关键因素。与以前的报道不同，我们展示了一种新的荧光猝灭机制，可归因于非等价取代的SrWO4：xEu3+荧光粉中的第二相Eu2W2O9。系统地研究了所制备的SrWO4：xEu3+荧光粉的晶体结构、元素分布和发光性能。当Eu3+掺杂浓度超过20%时，出现第二相Eu2W2O9，产生新的结构缺陷和能量转移路径，导致材料的荧光猝灭。这一发现为分析非等价取代荧光粉的浓度猝灭机理提供了新的视角，并有助于设计新的、高效的发光材料。此外，所制备的SrWO_4：xEu~(3+)荧光粉在355-425 nm范围内表现出强烈的本征激发，并伴随着(0.653，0.347)的国际委员会坐标，稳定的颜色纯度高达94.52%。用掺20%Eu3+、蓝色BaM：Eu2+和绿色YAGb：Tb3+的SrWO4：20%Eu3+荧光粉在近紫外光芯片中制成了CIE色度坐标为(0.398，0.335)、相关色温为3132K、显色指数为84.3的封装白光二极管。我们证明了非等价取代的SrWO4：xEu3+发光材料中第二相Eu2W2O9的荧光猝灭机制，这与等效的均匀掺杂Eu3+的发光材料不同。制作了性能良好的白光发光二极管。
Concentration quenching, which generally originates from serious energy migrations among the uniformly distributed luminescent centers in the host matrix, is a key factor to influence the luminescence properties of materials. Different from previous reports, we demonstrate a novel fluorescence-quenching mechanism attributable to the second-phase Eu2W2O9 in non-equivalent substituted SrWO4:xEu3+ phosphors. The crystal structure, elemental distribution, and luminescence properties of the as-prepared SrWO4:xEu3+ phosphors are systematically investigated. A second-phase Eu2W2O9 is confirmed when the Eu3+-doping concentration exceeds 20%, which produces the new structure defects and energy-transfer paths, resulting in fluorescence quenching in this material. This finding gives a new perspective to analyze the concentration-quenching mechanism of the non-equivalent substituted phosphors and can help in the design of new, efficient luminescence materials. In addition, the as-prepared SrWO4:xEu3+ phosphors exhibit a strong intrinsic excitation in the range of 355–425 nm, which is accompanied by the Commission Internationale de I'Eclairage (CIE) coordinates at (0.653, 0.347) and stable color purity of up to 94.52%. A packaged white light-emitting diode with CIE chromaticity coordinates of (0.398, 0.335), correlated color temperature of 3132 K, and color rendering index of 84.3 is fabricated by SrWO4:20%Eu3+ phosphors with blue BAM:Eu2+ and green YAGB:Tb3+ phosphors in a near-ultraviolet chip. We demonstrate a fluorescence-quenching mechanism attributable to second phase Eu2W2O9 in non-equivalent substituted SrWO4:xEu3+ phosphors, different to equivalent uniformly Eu3+-doped luminescent materials. A white light-emitting diode with good performance is fabricated.
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