Enhanced X-ray excited luminescence of Ga- and In-doped ZnO nanorods by hydrogen annealing

Enhanced X-ray excited luminescence of Ga- and In-doped ZnO nanorods by hydrogen annealing
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通过氢退火增强 Ga 和 In 掺杂 ZnO 纳米棒的 X 射线激发发光

DOI:
10.1016/j.materresbull.2016.10.027
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发表时间:
2017-02
影响因子:
5.4
通讯作者:
Wu Qiang
Wu Qiang
中科院分区:
材料科学2区
文献类型:
--
作者:
Li Qianli;Liu Xiaolin;Gu Mu;Huang Shiming;Zhang Juannan;Liu Bo;Ni Chen;Hu Yahua;Zhao Shuning;Wu Qiang

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采用水热法制备了掺镓和掺铟的氧化锌纳米棒,详细研究了氢气退火对其形貌、结构和发光性能的影响。结果表明,退火处理提高了纳米棒的表面粗糙度和晶化程度。此外,经过氢处理的纳米棒在紫外光和X射线激发下表现出显著的紫外光发射增强和可见光发射抑制,以及亚纳秒级的荧光衰减时间。这意味着这些纳米棒有望在超快和高空间分辨率的X射线成像探测器中应用。
The Ga- and In-doped ZnO nanorods were prepared by hydrothermal method, and the effect of the hydrogen annealing on their morphology, structure and luminescence properties was investigated in detail. The results indicated that the annealing treatment resulted in the improvement of the surface roughness and the crystallization of the nanorods. Furthermore, the hydrogen-annealed nanorods exhibited a significant enhancement of the ultraviolet emission and simultaneous suppression of the visible emission under ultraviolet and X-ray excitation, as well as a sub-nanosecond fluorescence decay time. It means that these nanorods are expected to be promising candidates for applications in superfast and high-spatial-resolution X-ray imaging detectors.
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