Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN
Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN
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W、WSiN 和 Nb 与 p 型和 n 型 GaN 接触的电特性和热稳定性
DOI：
10.1007/s11664-999-0019-9
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发表时间：
1999
影响因子：
2.1
通讯作者：
R. Dupuis
中科院分区：
文献类型：
--
作者：
K. Shiojima;D. Mcinturff;J. Woodall;P. Grudowski;C. J. Eiting;R. Dupuis
对W、WSiN和Nb耐火材料与p型和n-GaN的接触进行了全面的退火研究。通过电流-电压（I-V）测量检查样品。与n-GaN的W和Nb接触均显示出整流特性，肖特基势垒高度（qøB）为0.63 eV。对于p-GaN，I-V曲线显示出非常泄漏的行为。相比之下，WSiN/n-GaN的I-V曲线是非常泄漏的，而WSiN/p-GaN的I-V曲线是整流的，qøB为0.8eV。W和WSiN接触的退化温度均为700°C，Nb接触的退化温度为300°C。
A comprehensive annealing study of W, WSiN, and Nb refractory contacts to both p- and n-GaN was performed. Samples were examined by current-voltage (I-V) measurements. Both W and Nb contacts to n-GaN showed rectifying characteristics with Schottky barrier heights (qøB) of 0.63 eV. For p-GaN, the I-V curves showed very leaky behavior. In contrast, I-V curves of WSiN/n-GaN were very leaky while those of WSiN/p-GaN were rectifying with qøBof 0.8 eV. The degradation temperature of both W and WSiN contacts was 700°C and that of Nb contacts was 300°C.
影响因子：
4
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
通讯作者：
SENOH, M