Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface.
Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface.
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DOI：
10.1002/anie.202213982
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发表时间：
2023-02-06
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--
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锗已经成为自旋电子学和量子信息应用中非常有前途的材料，与硅相比具有显着的基本优势。然而，使用供体原子作为量子比特创建原子级器件的努力主要集中在硅中的磷上。以原子尺度的精度在硅中定位磷需要热掺杂退火，但这一步的低成功率已被证明是禁止大规模设备的基本限制。在这里，我们提出了一个全面的研究砷（AsH3）在锗（001）表面。我们发现，与以前研究过的硅或锗的掺杂前驱体不同，砷原子在室温下完全结合到取代的表面晶格位置。我们的研究结果为下一代原子级供体器件铺平了道路，这些器件结合了锗的优越电子特性和砷/锗化学的增强特性，有望扩展到大量确定放置的量子位。我们报告了砷原子在室温下暴露于砷（AsH3）表面时取代合并到锗（001）表面的发现。我们观察到几种类型的砷结构，不同的只是在三个吸附氢原子的位置。砷的掺入导致锗原子被释放到表面。这些结果提供了一条通往原子尺度掺杂器件的道路，在锗中具有明显优于硅的优势。
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic‐scale devices using donor atoms as qubits have largely focused on phosphorus in silicon. Positioning phosphorus in silicon with atomic‐scale precision requires a thermal incorporation anneal, but the low success rate for this step has been shown to be a fundamental limitation prohibiting the scale‐up to large‐scale devices. Here, we present a comprehensive study of arsine (AsH3) on the germanium (001) surface. We show that, unlike any previously studied dopant precursor on silicon or germanium, arsenic atoms fully incorporate into substitutional surface lattice sites at room temperature. Our results pave the way for the next generation of atomic‐scale donor devices combining the superior electronic properties of germanium with the enhanced properties of arsine/germanium chemistry that promises scale‐up to large numbers of deterministically placed qubits. We report the discovery that arsenic atoms incorporate substitutionally into the (001) surface of germanium at room temperature when the surface is exposed to arsine (AsH3). We observe several types of incorporated arsenic structures that differ only in the locations of the three adsorbed hydrogen atoms. Arsenic incorporation causes germanium ad‐atoms to be released onto the surface. These results provide a path toward atomic‐scale dopant devices in germanium with clear advantages over silicon.
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