A novel Eu-dependent G-La2Si2O7 single matrix phosphor for white light-emitting diodes
A novel Eu-dependent G-La2Si2O7 single matrix phosphor for white light-emitting diodes
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一种用于白光发光二极管的新型Eu依赖性G-La2Si2O7单基体荧光粉
DOI：
10.1016/j.ceramint.2021.06.181
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发表时间：
2021-10
影响因子：
5.2
通讯作者：
Wenqi Zhang
中科院分区：
文献类型：
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作者：
Jinlong Huang;Jieqiong Wan;Yue Li;Yan Li;Xiaohan Wu;Wenqi Zhang
采用溶胶-凝胶法合成了一种新型的G-La 2Si 2 O 7：Eu荧光粉。在G-La_2Si_2 O_7：Eu晶格中，二价Eu ~（2+）和三价Eu ~（3+）发光中心共存。此外，在G-La 2Si 2 O 7：Eu晶格中存在两种类型的Eu 2+发光中心，记为Eu 1和Eu 2，它们来自于G-La 2Si 2 O 7基质中的两个La 3+晶位。Eu 1代表蓝光带发射，而Eu 2显示绿-黄发射。Eu 2+的选择性占据导致Eu 2+的大规模蓝黄调控。Eu 3+离子在593 nm和611 nm处有典型的红色尖线发射，属于5D 0 → 7 FJ（J = 1，2）跃迁。详细讨论了G-La_2Si_2 O_7：Eu的发光过程。在G-La_2Si_2 O_7：Eu晶格中存在Eu_3+向Eu_1、Eu_2、Eu_1向Eu_2的能量转移过程。探讨了Eu掺杂浓度对薄膜性能的影响。随着Eu的增加，主要发射从Eu 2+变为Eu 3+。Eu 1、Eu 2+和Eu 3+的共存使G-La 2Si 2 O 7：Eu的蓝色变为红色。当Eu掺杂量为0.5%时，G-La_（1. 99）Si_2 O_7：0.01 Eu样品为单相白色发光材料。在紫外光254 nm激发下，La 1.99Si2O7：0.01Eu样品获得了近似于全谱的发射光谱，呈现指数Ra = 91。此外，G-La 2Si 2 O 7：Eu具有良好的荧光热稳定性，发光强度保持在室温（30 °C）的80%（160 °C），表明G-La 2Si 2 O 7：Eu是一种很有潜力的单基质nUV芯片WLED候选材料。
A novel G-La2Si2O7: Eu phosphor has been synthesized through SiC-reduction assisted with sol-gel method. Divalent Eu2+and trivalent Eu3+luminescent centers coexist in G-La2Si2O7: Eu lattice. Furthermore, two types of Eu2+luminescent centers exist in G-La2Si2O7: Eu lattice, labeled as Eu1and Eu2, arising from two La3+crystallographic sites in G-La2Si2O7host. Eu1represents blue band emission while Eu2shows green-yellow emission. Eu2+selective occupation introduces Eu2+large-scale blue-yellow regulation. Eu3+shows typical red sharp line emission mainly located at 593 nm and 611 nm assigned to5D0→7FJ(J = 1, 2) transitions. The luminescence process in G-La2Si2O7: Eu is discussed in details. Energy transfer processes from Eu3+to Eu1and Eu2, Eu1to Eu2occurs in G-La2Si2O7: Eu lattice. The influence of Eu dopant concentration is explored. As Eu increases, the dominant emission changes from Eu2+to Eu3+. The coexistence of Eu1, Eu2and Eu3+brings G-La2Si2O7: Eu blue to red regulation. Fixing Eu doping at 0.5%, G-La1.99Si2O7: 0.01Eu sample shows a single-phased white light-emitting phosphor. At ultraviolet light 254 nm excitation, the emission spectrum approximate to full spectrum with a high rendering index of Ra = 91 is obtained using La1.99Si2O7: 0.01Eu sample at 254 nm excitation. Besides, G-La2Si2O7: Eu represents a good fluorescent thermal stability with luminous intensity keeping 80% (160 °C) of that at room temperature (30 °C), indicating G-La2Si2O7: Eu is a great potential single-matrix candidate in nUV-chip WLEDs.
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影响因子：
6.2
作者：
Yang Peng;Qinglei Sun;Jiaxin Liu;Hao-Chun Cheng;Yun Mou
通讯作者：
Yang Peng;Qinglei Sun;Jiaxin Liu;Hao-Chun Cheng;Yun Mou
影响因子：
--
作者：
Y. Shimomura;N. Kijima
通讯作者：
Y. Shimomura;N. Kijima
影响因子：
2.8
作者：
Yuanyuan Zhang;Z. Xia;Haikun Liu;Ziyuan Wang;Molin Li
通讯作者：
Yuanyuan Zhang;Z. Xia;Haikun Liu;Ziyuan Wang;Molin Li
影响因子：
3.7
作者：
H. Vrielinck;D. Zverev;P. Leblans;J. Tahon;P. Matthys;F. Callens
通讯作者：
H. Vrielinck;D. Zverev;P. Leblans;J. Tahon;P. Matthys;F. Callens
影响因子：
--
作者：
Y. Shimomura;N. Kijima
通讯作者：
Y. Shimomura;N. Kijima