The study of atmospheric pressure plasma for surface cleaning
The study of atmospheric pressure plasma for surface cleaning
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常压等离子体表面清洗研究
DOI：
10.1016/s0257-8972(03)00278-0
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发表时间：
2003
影响因子：
5.4
通讯作者：
G. Yeom
中科院分区：
文献类型：
--
作者：
C. Yi;Young;G. Yeom
本研究采用毛细管介质覆盖介质阻挡放电产生常压等离子体。研究了He+O2、(He+O2)/Ar和(He+O2)/ sf6等不同气体组合对接触角、表面能和光刻胶蚀刻速率（ER）的影响。通过在He （4 slm）中加入少量的O2(40 sccm)，我们观察到光刻胶的ER与接收样品相比增加了，接触角减小了。在优化后的He/ o2中加入sf6对接触角没有任何改善。当sf6添加量大于40 sccm时，发生沉积而不是蚀刻。He/ o2基等离子体清洗5 ~ 30 s后，玻璃表面的接触角从30°下降到9.5 ~ 11°。在400 W交流功率下，当He (4 slm) + O2 (40 sccm) /Ar （20 sccm）时，可获得最小接触角为9°，光刻胶ER为210 nm/min。采用He/O2/Ar基等离子体处理氧化铟锡（ITO）、银和聚碳酸酯表面，接触角减小，表面能增加。沉积在玻璃上的ITO的接触角下降了78%，镀银的ITO的接触角下降了24%，聚碳酸酯样品的接触角下降了70%。镀在玻璃上的ITO表面能增加46%，镀银的ITO表面能增加7%，聚碳酸酯表面能增加68%。
In this study, capillary dielectric-covered dielectric barrier discharge was used to generate atmospheric pressure plasmas. The effect of various gas combinations such as He+O2, (He+O2)/Ar, and (He+O2)/SF6was studied with respect to the changes in contact angle, surface energy and photoresist etch rate (ER). By adding a small percentage of O2(40 sccm) to He (4 slm), we observed the increase in photoresist ER and the reduction of contact angle compared with the as-received sample. The effect of adding SF6to the optimized He/O2did not show any improvement in the contact angle. When SF6was added more than 40 sccm, deposition has occurred instead of etching. The contact angle of the glass surface was decreased from 30° to 9.5–11° after cleaning with He/O2based plasmas for 5–30 s. The lowest contact angle of 9° with the higher photoresist ER of 210 nm/min was obtained with (4 slm He+40 sccm O2)/Ar (20 sccm) at 400 W of alternating current power. Using He/O2/Ar based plasma to treat indium tin oxide (ITO), Ag, and polycarbonate surface, the contact angle is decreased, while the surface energy is increased. The contact angle decreased 78% for ITO deposited on the glass, decreased 24% for Ag patterned on the ITO, and decreased 70% for polycarbonate as-received samples. And the surface energy increased 46% for ITO deposited on the glass, increased 7% for Ag patterned on the ITO, and increased 68% for polycarbonate.
影响因子：
2.9
作者：
Jeong, JY;Babayan, SE;Hicks, RF
通讯作者：
Hicks, RF