Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors
Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors
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用于a-InGaZnO薄膜晶体管的高可靠性光敏有机-无机混合钝化层
DOI：
10.1063/1.4927274
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发表时间：
2015
影响因子：
4
通讯作者：
Y. Uraoka
中科院分区：
文献类型：
--
作者：
J. Bermundo;Y. Ishikawa;H. Yamazaki;T. Nonaka;M. Fujii;Y. Uraoka
报道了一种在非晶态InGaZnO(a-IGZO)薄膜晶体管(TFT)上制备的光敏混合钝化材料，大大提高了其稳定性，改善了其电学特性。基于聚倍半硅氧烷的混合钝化是透明的，并使用简单的溶液工艺制备。由于钝化是光敏的，所以在TFT制造过程中从未进行过干法刻蚀。用该材料钝化的TFT在正偏压下的阈值电压漂移为0.5 V，在负偏压下的阈值电压漂移为0.5 V，在负偏压下的阈值电压漂移为2.5−V。此外，经该钝化层钝化的TFT在经历高相对湿度应力后仍保持稳定，从而证实了钝化具有良好的阻挡能力。二次离子质谱分析表明，在通道区域可以发现大量的氢、碳和氟。结果表明，氢和氟都减少了氧空位，而氟对氧空位的影响较小。
We report the fabrication of a photosensitive hybrid passivation material on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) that greatly enhance its stability and improve its electrical characteristics. The hybrid passivation based on polysilsesquioxane is transparent and fabricated using a simple solution process. Because the passivation is photosensitive, dry etching was never performed during TFT fabrication. TFTs passivated with this material had a small threshold voltage shift of 0.5 V during positive bias stress, 0.5 V during negative bias stress, and −2.5 V during negative bias illumination stress. Furthermore, TFTs passivated by this layer were stable after being subjected to high relative humidity stress — confirming the superb barrier ability of the passivation. Analysis of secondary ion mass spectrometry showed that a large amount of hydrogen, carbon, and fluorine can be found in the channel region. We show that both hydrogen and fluorine reduced oxygen vacancies and that fluorine stab...
影响因子：
64.8
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H