Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser
Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser
复制标题
自优化超快二极管激光器中的无源、有源和混合锁模
DOI:
10.1117/12.2290086
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发表时间:
--
期刊:
影响因子:
--
通讯作者:
Martin R. Hofmann
中科院分区:
文献类型:
--
作者:
Mohammad Ali Alloush;Rouven H. Pilny;Carsten Brenner;Andreas Klehr;Andrea Knigge;Günther Tränkle;Martin R. Hofmann
Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.
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DOI:
--
发表时间:
2015
期刊:
Photonics West - Optoelectronic Materials and Devices
影响因子:
--
作者:
B. Döpke;J. Balzer;R. H. Pilny;C. Brenner;A. Klehr;G. Erbert;G. Tränkle;M. Hofmann
通讯作者:
M. Hofmann
影响因子:
4.9
作者:
J. Balzer;R. H. Pilny;B. Dopke;A. Klehr;G. Erbert;G. Trankle;C. Brenner;M. Hofmann
通讯作者:
M. Hofmann
影响因子:
3.6
作者:
Rouven H. Pilny;Benjamin Döpke;Jan C. Balzer;Carsten Brenner;Andreas Klehr;Andrea Knigge;Günther Tränkle;Martin R. Hofmann
通讯作者:
Martin R. Hofmann
DOI:
--
发表时间:
1995
期刊:
影响因子:
--
作者:
M. Schell;J. Yu;M. Tsuchiya;T. Kamiya
通讯作者:
T. Kamiya
DOI:
--
发表时间:
1991
期刊:
--
影响因子:
--
作者:
Melanie Mitchell;S. Forrest;J. Holland
通讯作者:
Melanie Mitchell;S. Forrest;J. Holland