Weak anti-localization and quantum oscillations of surface states in topological insulator Bi₂Se₂Te.
Weak anti-localization and quantum oscillations of surface states in topological insulator Bi₂Se₂Te.
复制标题
DOI：
10.1038/srep00726
复制
发表时间：
2012
影响因子：
4.6
通讯作者：
Xiu, Faxian
中科院分区：
文献类型：
--
作者：
Bao, Lihong;He, Liang;Meyer, Nicholas;Kou, Xufeng;Zhang, Peng;Chen, Zhi-gang;Fedorov, Alexei V.;Zou, Jin;Riedemann, Trevor M.;Lograsso, Thomas A.;Wang, Kang L.;Tuttle, Gary;Xiu, Faxian
拓扑绝缘体是一种新的物质量子态，由于其无隙螺旋金属表面态，为研究拓扑量子物理和探索自旋电子学应用创造了令人兴奋的机会。本文报道了在Bi_2Se_2Te晶体中观察到的弱反局域化和源于表面态的量子振荡。角分辨光电子能谱测量解理Bi 2Se 2 Te晶体显示出良好定义的线性色散没有交叉的导带。测得的弱反定域效应与Hikami-Larkin-Nagaoka模型吻合得很好，提取的相位相干长度与温度呈幂律关系（Δ T−0.44），表明存在表面态。更重要的是，对舒布尼科夫-德哈斯振荡的朗道能级扇形图的分析得出了一个有限的Berry相位为π 0.42π，表明表面态的狄拉克性质。我们的研究结果表明，Bi 2Se 2 Te可以作为一个合适的拓扑绝缘体候选人实现表面狄拉克费米子的本征量子输运。
Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi2Se2Te crystals. Angle-resolved photoemission spectroscopy measurements on cleaved Bi2Se2Te crystals show a well-defined linear dispersion without intersection of the conduction band. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherent length shows a power-law dependence with temperature (∼T−0.44), indicating the presence of the surface states. More importantly, the analysis of a Landau-level fan diagram of Shubnikov-de Hass oscillations yields a finite Berry phase of ∼0.42π, suggesting the Dirac nature of the surface states. Our results demonstrate that Bi2Se2Te can serve as a suitable topological insulator candidate for achieving intrinsic quantum transport of surface Dirac fermions.
登录
查看更多内容
影响因子：
56.9
作者：
Bernevig, B. Andrei;Hughes, Taylor L.;Zhang, Shou-Cheng
通讯作者：
Zhang, Shou-Cheng
影响因子：
56.9
作者：
Koenig, Markus;Wiedmann, Steffen;Zhang, Shou-Cheng
通讯作者：
Zhang, Shou-Cheng
影响因子：
8.6
作者：
Chen, J.;Qin, H. J.;Lu, L.
通讯作者：
Lu, L.
影响因子：
3.7
作者：
Kim, Yong Seung;Brahlek, Matthew;Oh, Seongshik
通讯作者：
Oh, Seongshik
影响因子：
64.8
作者：
Hsieh, D.;Qian, D.;Hasan, M. Z.
通讯作者：
Hasan, M. Z.