Distinctive distribution of defects in CdZnTe:In ingots and their effects on the photoelectric properties
Distinctive distribution of defects in CdZnTe:In ingots and their effects on the photoelectric properties
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CdZnTe:In铸锭中缺陷的特征分布及其对光电性能的影响
DOI：
10.1088/1674-1056/27/3/037302
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发表时间：
2018
影响因子：
1.7
通讯作者：
Jie Wan-Qi
中科院分区：
文献类型：
--
作者：
Fu Xu;Wang Fang-Bao;Zuo Xi-Ran;Wang Ze-Jian;Wang Qian-Ru;Wang Ke-Qin;Xu Ling-Yan;Xu Ya-Dong;Guo Rong-Rong;Yu Hui;Jie Wan-Qi
用各种方法研究了具有独特缺陷分布的样品中的CdZnTe：In的光电性质。从晶锭头部(T04)和尾部(W02)切下的样品显示出明显不同的Te夹杂物分布。在傅里叶变换红外光谱、UV-VIS-NIR透过率光谱和I-V测量中没有观察到明显的差异。然而，根据激光诱导电流(LBIC)的测量，尖端样品的载流子迁移率高于尾部样品。低温光致发光(PL)显示T04的d0x和A0x发射峰尖锐，d0x(或A0x)/DComplex峰较大，结晶质量较好。热刺激电流(TSC)谱显示W02样品中Cd+等中存在较高密度的浅点缺陷，即Cd空位，这可能是导致电子迁移率恶化的原因。
Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques. Samples cut from the head (T04) and tail (W02) regions of a crystal ingot show distinct differences in Te inclusion distribution. Obvious difference is not observed in Fourier transform infrared (FTIR) spectra, UV–Vis–NIR transmittance spectra, and I–V measurements. However, carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current (LBIC) measurements. Low temperature photoluminescence (PL) measurement presents sharp emission peaks of D0X and A0X, and relatively large peak of D0X (or A0X) / Dcomplex for T04, indicating a better crystalline quality. Thermally stimulated current (TSC) spectrum shows higher density of shallow point defects, i.e., Cd vacancies, In Cd + , etc., in W02 sample, which could be responsible for the deterioration of electron mobility.
DOI：
10.1007/978-3-540-74761-1_6
发表时间：
2010
期刊：
--
影响因子：
--
作者：
P. Rudolph
通讯作者：
P. Rudolph
DOI：
10.33915/etd.1252
发表时间：
2001
期刊：
--
影响因子：
--
作者：
Swati Jain
通讯作者：
Swati Jain