Impact of cooling condition on the crystal structure and surface quality of preferred c-axis-oriented AlN films for SAW devices

Impact of cooling condition on the crystal structure and surface quality of preferred c-axis-oriented AlN films for SAW devices
复制标题

冷却条件对 SAW 器件优选 c 轴取向 AlN 薄膜晶体结构和表面质量的影响

DOI:
10.1007/s11801-011-1021-z
复制
发表时间:
2011-08
影响因子:
0.9
通讯作者:
Li, Ming-ji
Li, Ming-ji
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Zhang, Geng-yu;Yang, Bao-he;Zhao, Jian;Li, Cui-ping;Li, Ming-ji

文献摘要

参考文献

相似文献

AlN films with preferred c-axis orientation are deposited on Si substrates using the radio frequency (RF) magnetron sputtering method. The post-processing is carried out under the cooling conditions including high vacuum, low vacuum under deposition gas ambient and low vacuum under dynamic N2 ambient. Structures and morphologies of the films are analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The hardness and Young’s modulus are investigated by the nanoindenter. The experimental results indicate that the (100) and (110) peak intensities decrease in the XRD spectra and the root-mean-square of roughness (Rrms) of the film decreases gradually with the increase of the cooling rate. The maximum values of the hardness and Young’s modulus are obtained by cooling in low vacuum under deposition gas ambient. The reason for orientation variation of the films is explained from the perspective of the Al-N bond formation.
DOI: 10.1063/1.351530
发表时间: 1992-10
影响因子: 3.2
作者:
N. Savvides;T. Bell
通讯作者: N. Savvides;T. Bell
DOI: 10.1063/1.3270536
发表时间: 2009-12-07
影响因子: 4
作者:
Elmazria, Omar;Zhgoon, Sergei;Djouadi, Mohammed Abdou
通讯作者: Djouadi, Mohammed Abdou
DOI: 10.1063/1.2837179
发表时间: 2008-01-21
影响因子: 4
作者:
Caliendo, Cinzia
通讯作者: Caliendo, Cinzia
DOI: 10.1007/s11801-010-9271-8
发表时间: 2010-06
影响因子: 0.9
作者:
K. Zhao;Jia-chun Deng;Xiao-man Cheng;Xiaoming Wu;Liying Yang;Y. Hua;Jun Wei;S. Yin
通讯作者: K. Zhao;Jia-chun Deng;Xiao-man Cheng;Xiaoming Wu;Liying Yang;Y. Hua;Jun Wei;S. Yin
DOI: 10.1063/1.359441
发表时间: 1995-05
影响因子: 3.2
作者:
R. Vispute;J. Narayan;Hong Wu;K. Jagannadham
通讯作者: R. Vispute;J. Narayan;Hong Wu;K. Jagannadham