Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
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反应磁控溅射沉积 AlN 薄膜在 Si(001) 衬底上的外延生长和取向
DOI：
10.1063/1.2402971
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发表时间：
2006
影响因子：
3.2
通讯作者：
L. Hultman
中科院分区：
文献类型：
--
作者：
E. Valcheva;J. Birch;P. Persson;S. Tungasmita;L. Hultman
利用透射电镜和X射线衍射研究了反应磁控溅射沉积在Si（001）衬底上的AlN薄膜中外延畴的形成和织构生长。薄膜具有纤锌矿型结构，与AlN（0001）<$Si（001）的硅衬底具有晶体取向关系。观察到AlN膜在Si表面随机形核并三维生长，形成柱状畴。面内取向揭示了四个畴，它们的a轴相对于彼此旋转15°：AlN 0 Si[110]，AlN Si[110]，AlN Si[100]和AlN Si [100]。
Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN(0001)‖Si(001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally, forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15° with respect to each other: AlN⟨112¯0⟩‖Si[110], AlN⟨011¯0⟩‖Si[110], AlN⟨112¯0⟩‖Si[100], and AlN⟨011¯0⟩‖Si[100] An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed.
DOI：
10.1007/978-3-642-58562-3
发表时间：
1999
期刊：
--
影响因子：
--
作者：
H. Morkoç
通讯作者：
H. Morkoç