Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells
Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells
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具有透明隧道结和优化量子阱的低压降 AlGaN UV-A 激光器结构
DOI：
10.1088/1361-6463/ad039c
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Arafin, Shamsul
中科院分区：
文献类型：
--
作者：
Ghosh, Arnob;Dominic Merwin Xavier, Agnes Maneesha;Hasan, Syed M. N.;Rahman, Sheikh Ifatur;Blackston, Alex;Allerman, Andrew;Myers, Roberto C.;Rajan, Siddharth;Arafin, Shamsul
本文介绍了等离子体辅助分子束外延生长AlGaN激光器结构的设计、材料生长和制备。考虑到空穴传输是主要的挑战，我们的紫外线-A二极管激光器结构具有成分渐变的透明隧道结，从而导致上级空穴注入和低接触电阻。通过优化有源区的厚度，光致发光强度的五倍的改善相比，我们自己的非优化的测试结构。经处理的器件的电学和光学特性仅显示出峰值波长为354 nm的自发发射。该器件在室温下的连续波电流密度高达11.1 kA cm-2，这是在AlGaN模板上生长的激光结构的最高报告。此外，它们还表现出8.5 V的创纪录低电压降，以实现这一电流密度。
This paper presents the design, material growth and fabrication of AlGaN laser structures grown by plasma-assisted molecular beam epitaxy. Considering hole transport to be the major challenge, our ultraviolet-A diode laser structures have a compositionally graded transparent tunnel junction, resulting in superior hole injection and a low contact resistance. By optimizing active region thickness, a five-fold improvement in photoluminescence intensity is obtained compared to that of our own non-optimized test structures. The electrical and optical characteristics of processed devices demonstrate only spontaneous emission with a peak wavelength at 354 nm. The devices operate up to a continuous-wave current density of 11.1 kA cm− 2 at room temperature, which is the highest reported for laser structures grown on AlGaN templates. Additionally, they exhibit a record-low voltage drop of 8.5 V to achieve this current density.
III 族氮化物紫外激光二极管
影响因子：
3
作者：
T. Wernicke;L. Sulmoni;C. Kuhn;G. Tränkle;M. Weyers;M. Kneissl
通讯作者：
M. Kneissl