Group III-Nitride-Based UV Laser Diodes
Group III-Nitride-Based UV Laser Diodes
复制标题
III 族氮化物紫外激光二极管
DOI：
10.1007/978-3-030-35656-9_13
复制
发表时间：
2020
影响因子：
3
通讯作者：
M. Kneissl
中科院分区：
文献类型：
--
作者：
T. Wernicke;L. Sulmoni;C. Kuhn;G. Tränkle;M. Weyers;M. Kneissl
综述了深紫外激光器的最新研究进展，并讨论了基于algan的激光二极管异质结构设计和外延生长所面临的挑战。综述了AlN在蓝宝石和AlGaN异质结构上的生长及其对UVC光谱范围内激光器性能特性的影响。我们在270 nm附近实现了阈值功率密度小于800 kW/cm2的光泵浦AlGaN多量子阱（MQW）激光器，光泵浦AlGaN MQW激光器的最短波长为237 nm。我们讨论了发展当前注入深紫外激光二极管的关键步骤，包括高铝摩尔分数AlGaN的Si和mg掺杂研究。实现了电阻低至0.026 Ω cm的n-Al0.8Ga0.2N包层和uvc透明p-AlGaN包层。最后，在最大电流密度为4.7 kA/cm2的情况下，证明了电流注入广域紫外激光二极管的电致发光。最后，展望了深紫外激光二极管的发展前景，并讨论了电子束抽运等替代方法。
Recent progress in the development of deep ultraviolet lasers is reviewed as well as challenges for the heterostructure design and epitaxial growth for AlGaN-based laser diodes are discussed. The growth of AlN on sapphire and AlGaN heterostructures is reviewed and its impact on the performance characteristics of lasers in the UVC spectral range is presented. We achieve optically pumped AlGaN multiple quantum well (MQW) lasers near 270 nm with threshold power densities of less than 800 kW/cm2 and optically pumped AlGaN MQW lasers emitting at record shortest wavelength of 237 nm. We discuss critical stepping stones towards the development of current injection deep UV laser diodes including studies on Si- and Mg-doping of AlGaN with high aluminum mole fractions. n-Al0.8Ga0.2N cladding layers with resistances as low as 0.026 Ω cm are realized and UVC-transparent p-AlGaN cladding layers are developed. Finally, electroluminescence from current injection broad area UV laser diodes is demonstrated with maximum current densities of 4.7 kA/cm2. At the end, we provide an outlook of future prospect for deep UV laser diodes and discuss alternative approaches, e.g., electron beam pumping.
登录
查看更多内容
影响因子：
1.8
作者：
Bryan, Isaac;Bryan, Zachary;Sitar, Zlatko
通讯作者：
Sitar, Zlatko
影响因子：
4.6
作者：
Mohn, Stefan;Stolyarchuk, Natalia;Albrecht, Martin
通讯作者：
Albrecht, Martin
影响因子：
2.6
作者：
Martens, Martin;Mehnke, Frank;Kneissl, Michael
通讯作者：
Kneissl, Michael
影响因子：
7.6
作者：
Kuhn, Christian;Sulmoni, Luca;Kneissl, Michael
通讯作者：
Kneissl, Michael
影响因子：
4
作者：
Susilo, Norman;Hagedorn, Sylvia;Kneissl, Michael
通讯作者：
Kneissl, Michael