Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
复制标题
通过半导体量子点之间的反铁磁耦合实现电子自旋翻转
DOI：
10.1143/jjap.42.4278
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
N. Yokoyama
中科院分区：
文献类型：
--
作者：
A. Tackeuchi;T. Kuroda;Y. Nakata;M. Murayama;T. Kitamura;N. Yokoyama
我们研究了半导体量子点之间的反铁磁耦合。观察到电子自旋翻转后，通过点间交换相互作用的光激发在80 ps。反铁磁阶下的自旋弛豫时间延长到10-12 ns，比孤立量子点的自旋弛豫时间长一个数量级。在低于50-80 K的温度下存在反铁磁有序。不同载流子浓度下的光致发光实验表明，当电子配对几率较低时，反铁磁耦合消失。海特勒-伦敦近似的基础上的模型计算支持的发现，反铁磁秩序是在低温下观察到的。
We have investigated antiferromagnetic coupling between semiconductor quantum dots. Electron spin is observed to flip at 80 ps after photoexcitation via the interdot-exchange interaction. The spin relaxation time under the antiferromagnetic order is extended to 10–12 ns, one order of magnitude longer than that in isolated quantum dots. The antiferromagnetic order exists at temperatures lower than 50–80 K. The photoluminescence experiments for various carrier densities show that antiferromagnetic coupling disappears when the electron pairing probability is low. A model calculation based on the Heitler–London approximation supports the finding that the antiferromagnetic order is observable at low temperature.
影响因子：
1.5
作者：
A. Tackeuchi;T. Kuroda;ShunichiMuto Nishikawa;OsamuWada OsamuWada-OsamuWada
通讯作者：
A. Tackeuchi;T. Kuroda;ShunichiMuto Nishikawa;OsamuWada OsamuWada-OsamuWada