Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders.
Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders.
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金属辅助催化蚀刻（MACE）用于半导体粉末的纳米化。
DOI：
10.3390/mi12070776
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发表时间：
2021-06-30
期刊：
影响因子：
3.4
通讯作者：
Kolasinski KW
中科院分区：
文献类型：
--
作者：
Kolasinski KW
通过添加结构化金属催化剂，半导体无电蚀刻已提升为先进的微加工工艺。通过光刻技术对催化剂进行图案化有利于晶体和多晶晶片基底的图案化。金属在半导体上的电沉积自然倾向于产生纳米颗粒而不是平坦均匀的薄膜。这一特性使得蚀刻任意形状和尺寸的晶片和颗粒成为可能。虽然人们广泛认识到金属纳米颗粒的自发沉积可以与蚀刻结合使用以使晶片多孔化，但也可以生产纳米结构粉末。可以控制金属辅助催化蚀刻（MACE）以产生（1）形状和尺寸与金属纳米粒子的形状和尺寸密切相关的蚀刻径迹孔，（2）表现出大蚀刻径迹孔和介孔组合的分层多孔化基底，以及（3）具有实心或介孔核的纳米线。这篇综述讨论了多孔化机制、加工进步和蚀刻产品的特性，特别强调了硅粉的蚀刻。
Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst by lithographic techniques facilitated the patterning of crystalline and polycrystalline wafer substrates. Galvanic deposition of metals on semiconductors has a natural tendency to produce nanoparticles rather than flat uniform films. This characteristic makes possible the etching of wafers and particles with arbitrary shape and size. While it has been widely recognized that spontaneous deposition of metal nanoparticles can be used in connection with etching to porosify wafers, it is also possible to produced nanostructured powders. Metal-assisted catalytic etching (MACE) can be controlled to produce (1) etch track pores with shapes and sizes closely related to the shape and size of the metal nanoparticle, (2) hierarchically porosified substrates exhibiting combinations of large etch track pores and mesopores, and (3) nanowires with either solid or mesoporous cores. This review discussed the mechanisms of porosification, processing advances, and the properties of the etch product with special emphasis on the etching of silicon powders.
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影响因子：
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