High Temperature Ramping Rate for GaAs (111)A Substrate Covered with a Thin GaN Buffer Layer for Thick GaN Growth at 1000°C
High Temperature Ramping Rate for GaAs (111)A Substrate Covered with a Thin GaN Buffer Layer for Thick GaN Growth at 1000°C
复制标题
覆盖有薄 GaN 缓冲层的 GaAs (111)A 衬底的高温升温速率可在 1000°C 下生长厚 GaN
DOI：
10.1143/jjap.42.l526
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发表时间：
2003
影响因子：
1.5
通讯作者：
A. Koukitu
中科院分区：
文献类型：
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作者：
Y. Kumagai;H. Murakami;Y. Kangawa;A. Koukitu
研究了550°C下生长的覆盖有GaN缓冲层的GaAs（111）A衬底的升温速率对衬底热分解的影响，以确定在1000°C下用金属有机氯化氢气相外延（MOHVPE）生长厚GaN层时保护衬底不发生热分解的理想参数。GaN缓冲层在加热过程中的结晶和团聚被发现显着增加的温度斜坡率降低，因此高斜坡率被发现适用于高温生长的GaN在GaAs衬底上。当使用20.9°C/min的升温速率时，由于GaAs衬底的保护，获得了没有空隙或裂纹的厚GaN层。
The effects of temperature ramping rate on GaAs (111)A substrate covered with a thin GaN buffer layer grown at 550°C are investigated in order to determine the ideal parameters for protecting the substrate from thermal decomposition during the growth of a thick GaN layer at 1000°C by metalorganic hydrogen chloride vapor-phase epitaxy (MOHVPE). Crystallization and agglomeration of the GaN buffer layer during heating is found to increase markedly as the temperature ramping rate is decreased, and thus high ramping rates are found to be applicable to the high temperature growth of GaN on GaAs substrate. When a temperature ramping rate of 20.9°C/min is used, a thick GaN layer exhibiting no voids or cracks is obtained due to the protection of the GaAs substrate.
Y.KUMAGAI：“通过金属有机氯化氢气相外延在 GaAs (111) A 表面上生长厚六方 GaN 层以实现独立式 GaN”Jpn.J.Appl.Phys.. 39. L703-L706 (2000)
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