Design and fabrication of far ultraviolet filters based on π-multilayer technology in high-k materials.
Design and fabrication of far ultraviolet filters based on π-multilayer technology in high-k materials.
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DOI:
10.1038/srep08503
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发表时间:
2015-02-17
影响因子:
4.6
通讯作者:
Li YP
中科院分区:
文献类型:
--
作者:
Wang XD;Chen B;Wang HF;He F;Zheng X;He LP;Chen B;Liu SJ;Cui ZX;Yang XH;Li YP
Application of π-multilayer technology is extended to high extinction coefficient materials, which is introduced into metal-dielectric filter design. Metal materials often have high extinction coefficients in far ultraviolet (FUV) region, so optical thickness of metal materials should be smaller than that of the dielectric material. A broadband FUV filter of 9-layer non-periodic Al/MgF2 multilayer was successfully designed and fabricated and it shows high reflectance in 140–180 nm, suppressed reflectance in 120–137 nm and 181–220 nm.
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