High-performance thin film transistors from semiconducting liquid crystalline phases by solution processes
High-performance thin film transistors from semiconducting liquid crystalline phases by solution processes
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通过溶液工艺从半导体液晶相制备高性能薄膜晶体管
DOI：
10.1063/1.2768307
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发表时间：
2007
影响因子：
4
通讯作者：
N. Tamaoki
中科院分区：
文献类型：
--
作者：
Fapei Zhang;M. Funahashi;N. Tamaoki
作者通过旋涂工艺，以 5-丙基-5"-(4-戊基苯基)-2,2':5',2"-三噻吩 (3-TTPPh-5) 为原料，在室温下制备了具有近晶相的液晶 (LC) 半导体薄膜。这些薄膜由具有层状结构的大尺寸（大约几十微米）液晶域组成。退火后，近晶层内分子堆积的有序性得到增强。基于3-TTPPh-5的薄膜晶体管（TFT）的性能很大程度上受电介质硅烷剂改性的影响。辛基三氯硅烷 (OTS) 处理可提高性能，并在环境空气中实现超过 4×10−2cm2∕Vs 的高空穴迁移率。这归因于形成了尺寸与TFT沟道长度相当的高度有序域以及OTS和LC分子之间的良好相互作用。作者通过旋涂工艺从5-丙基-5"-(4-戊基苯基)-2,2':5',2"-三噻吩(3-TTPPh-5)制备了室温下具有近晶相的液晶(LC)半导体薄膜。这些薄膜由具有层状结构的大尺寸（大约几十微米）液晶域组成。退火后，近晶层内分子堆积的有序性得到增强。基于3-TTPPh-5的薄膜晶体管（TFT）的性能很大程度上受电介质硅烷剂改性的影响。辛基三氯硅烷 (OTS) 处理可提高性能，并在环境空气中实现超过 4×10−2cm2∕Vs 的高空穴迁移率。这归因于高度有序域的形成，其大小与 TFT 沟道长度相当，以及 OTS 和 LC 分子之间有利的相互作用。
The authors have prepared liquid crystalline (LC) semiconducting thin films with smectic phases at room temperature from 5-propyl-5″-(4-pentylphenyl)-2,2′:5′,2″-terthiophene (3-TTPPh-5) by spin-coating process. The films consist of large-size (approximately several tens of micrometers) LC domains with a lamellar structure. The ordering of molecular packing within the smectic layer is enhanced after annealing. The performance of thin film transistors (TFTs) based on 3-TTPPh-5 is influenced largely by silane agent modification of the dielectric. The octyltrichlorosilane (OTS) treatment enhances performance and leads to a high hole mobility of more than 4×10−2cm2∕Vs in ambient air. It is attributed to the formation of highly ordered domains with the size comparable to channel length of the TFT as well as the favorable interaction between OTS and LC molecules.The authors have prepared liquid crystalline (LC) semiconducting thin films with smectic phases at room temperature from 5-propyl-5″-(4-pentylphenyl)-2,2′:5′,2″-terthiophene (3-TTPPh-5) by spin-coating process. The films consist of large-size (approximately several tens of micrometers) LC domains with a lamellar structure. The ordering of molecular packing within the smectic layer is enhanced after annealing. The performance of thin film transistors (TFTs) based on 3-TTPPh-5 is influenced largely by silane agent modification of the dielectric. The octyltrichlorosilane (OTS) treatment enhances performance and leads to a high hole mobility of more than 4×10−2cm2∕Vs in ambient air. It is attributed to the formation of highly ordered domains with the size comparable to channel length of the TFT as well as the favorable interaction between OTS and LC molecules.
影响因子：
29.4
作者：
Funahashi, Masahiro;Zhang, Fapei;Tamaoki, Nobuyuki
通讯作者：
Tamaoki, Nobuyuki