Deposition of a-C:H films on UHMWPE substrate and its wear-resistance
Deposition of a-C:H films on UHMWPE substrate and its wear-resistance
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UHMWPE基材上a-C:H薄膜的沉积及其耐磨性能
DOI:
10.1016/j.apsusc.2009.08.017
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发表时间:
2009-10
影响因子:
6.7
通讯作者:
Huang, Nan
中科院分区:
文献类型:
--
作者:
Leng, Y. X.;Deng, Xingrui;Xie, Dong;Liu, Hengjun;Huang, Nan
In prosthetic hip replacements, ultrahigh molecular weight polyethylene (UHMWPE) wear debris is identified as the main factor limiting the lifetime of the artificial joints. Especially UHMWPE debris from the joint can induce tissue reactions and bone resorption that may lead to the joint loosening. The diamond like carbon (DLC) film has attracted a great deal of interest in recent years mainly because of its excellent tribological property, biocompatibility and chemically inert property. In order to improve the wear-resistance of UHMWPE, a-C:H films were deposited on UHMWPE substrate by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-PECVD) technology. During deposition, the working gases were argon and acetylene, the microwave power was set to 800W, the biased pulsed voltage was set to −200V (frequency 15kHz, duty ratio 20%), the pressure in vacuum chamber was set to 0.5Pa, and the process time was 60min. The films were analysed by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nano-indentation, anti-scratch and wear test. The results showed that a typical amorphous hydrogenated carbon (a-C:H) film was successfully deposited on UHMWPE with thickness up to 2μm. The nano-hardness of the UHMWPE coated with a-C:H films, measured at an applied load of 200μN, was increased from 10 MPa (untreated UHMWPE) to 139MPa. The wear test was carried out using a ball (Ø 6mm, SiC) on disk tribometer with an applied load of 1N for 10000 cycles, and the results showed a reduction of worn cross-sectional area from 193μm2of untreated UHMWPE to 26μm2of DLC coated sample. In addition the influence of argon/acetylene gas flow ratio on the growth of a-C:H films was studied.
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影响因子:
2.1
作者:
N. Ianno;R. Dillon;Abbas Ali;Ahmad Ahmad-Ahmad
通讯作者:
N. Ianno;R. Dillon;Abbas Ali;Ahmad Ahmad-Ahmad
DOI:
10.1097/00003086-199912000-00008
发表时间:
1999-12-01
影响因子:
4.2
作者:
McKellop, H;Shen, FW;Lancaster, JG
通讯作者:
Lancaster, JG
影响因子:
4.1
作者:
CHANDRA, L;ALLEN, M;CLYNE, TW
通讯作者:
CLYNE, TW
影响因子:
5.4
作者:
X. Zhou;S. Lee;I. Bello;A. Cheung;D. Chiu;Y. Lam;Chun‐Sing Lee;K. Leung;X. M. He
通讯作者:
X. Zhou;S. Lee;I. Bello;A. Cheung;D. Chiu;Y. Lam;Chun‐Sing Lee;K. Leung;X. M. He
影响因子:
4.1
作者:
Atchison, F.;Brys, T.;Straumann, U.
通讯作者:
Straumann, U.