Solution-Based Photo-Patterned Gold Film Formation on Silicon Nitride.

Solution-Based Photo-Patterned Gold Film Formation on Silicon Nitride.
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基于溶液的氮化硅上的光图案金膜形成。

DOI:
10.1021/acsami.6b12720
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发表时间:
2016
影响因子:
9.5
通讯作者:
Jason R Dwyer
Jason R Dwyer
中科院分区:
材料科学2区
文献类型:
--
作者:
Y. N. D. Bandara;B. Karawdeniya;Julie C. Whelan;Lucas D S Ginsberg;Jason R Dwyer

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通过低压化学气相沉积(LPCVD)制备的富硅(SiNx)氮化硅是微电子工业中普遍存在的绝缘薄膜,也是纳米纤维的特殊结构材料。独立式<100 nm厚的SiNx膜特别引人注目,特别是当用于在纳米流体装置中提供最前沿的分子传感能力时。我们开发了一种可访问的,温和的,基于溶液的光定向表面金属化的方法非常适合形成图案化的金属膜作为整体的结构和功能的特点,在薄膜为基础的氮化硅器件,用作电极或表面化学功能化平台,例如,增强现有的设备的能力和性能的广泛的应用。
Silicon nitride fabricated by low-pressure chemical vapor deposition (LPCVD) to be silicon-rich (SiNx), is a ubiquitous insulating thin film in the microelectronics industry, and an exceptional structural material for nanofabrication. Free-standing <100 nm thick SiNx membranes are especially compelling, particularly when used to deliver forefront molecular sensing capabilities in nanofluidic devices. We developed an accessible, gentle, and solution-based photodirected surface metallization approach well-suited to forming patterned metal films as integral structural and functional features in thin-membrane-based SiNx devices-for use as electrodes or surface chemical functionalization platforms, for example-augmenting existing device capabilities and properties for a wide range of applications.
DOI: 10.1021/nl204198w
发表时间: 2012-02-08
期刊: Nano letters
影响因子: 10.8
作者:
Han A;Kuan A;Golovchenko J;Branton D
通讯作者: Branton D
DOI: 10.1021/ja0454135
发表时间: 2005-01-26
影响因子: 15
作者:
McCarley, RL;Vaidya, B;Soper, SA
通讯作者: Soper, SA