Ambipolar Property of Isolated Hydrogen in Oxide Materials Revealed by Muon
Ambipolar Property of Isolated Hydrogen in Oxide Materials Revealed by Muon
复制标题
Muon揭示氧化物材料中孤立氢的双极性质
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
H. Hosono
中科院分区：
文献类型：
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作者：
M. Hiraishi;H. Okabe;A. Koda;R. Kadono;H. Hosono
作为伪氢（用元素符号Mu表示）的μ子的电子态研究一直被认为是实验获得半导体和电介质中稀氢(H)电子态的少数方法之一。同时，利用密度泛函理论（DFT）的第一性原理计算对这些材料中H的电子态的理论预测并不总是与Mu的观察状态一致，这是整合Mu和H的发现的障碍。在本文中，我们通过半定量模型解决了这一问题，该模型能够系统地理解大多数氧化物中Mu的电子态。
The study on the electronic state of muon as pseudo-hydrogen (represented by the elemental symbol Mu) has long been appreciated as one of the few methods to experimentally access the electronic state of dilute hydrogen (H) in semiconductors and dielectrics. Meanwhile, theoretical predictions on the electronic state of H in these materials by first-principles calculations using density functional theory (DFT) do not always agree with the observed states of Mu, standing as an obstacle to integrating the findings of both Mu and H. In this paper, we provide resolution to this problem by a semi-quantitative model that enables systematic understanding of the electronic states of Mu in most oxides.
影响因子：
3.7
作者：
King, P. D. C.;Veal, T. D.;McConville, C. F.
通讯作者：
McConville, C. F.