Negative differential resistance induced by the Jahn–Teller effect in single molecular coulomb blockade devices

Negative differential resistance induced by the Jahn–Teller effect in single molecular coulomb blockade devices
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单分子库仑封锁装置中 Jahn-Teller 效应引起的负微分电阻

DOI:
10.1016/j.commatsci.2013.09.020
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发表时间:
2014-02
影响因子:
3.3
通讯作者:
Guang-Hui Zhou
Guang-Hui Zhou
中科院分区:
材料科学3区
文献类型:
--
作者:
Ke-Qiu Chen;Ke-Qiu Chen;Guang-Hui Zhou;Guang-Hui Zhou

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利用价键理论和主方程技术,研究了苯基库仑阻塞器件的电子输运性质。结果表明,苯分子在电离过程中发生了Jahn-Teller畸变,从而提高了态的简并度。提升的简并态不同地耦合到左电极和右电极,导致负微分电阻。这种类型的负微分电阻涉及Jahn-Teller效应和击穿,这提供了一种设计具有负微分电阻行为的库仑阻塞器件的方法。
Using valence bond theory in combination with a master equation technique, we have investigated the electron transport properties of benzene-based coulomb blockade devices. The results show that the benzene molecule undergoes a Jahn–Teller distortion when ionized, which lifts the state degeneracy. The lifted degenerate states couple differently to the left and right electrodes, leading to negative differential resistance. This type of negative differential resistance involves the Jahn–Teller effect and symmetry-breaking, which provides a way to design coulomb blockade devices with negative differential resistance behavior.
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