Comparison Between Competing Requirements of GaN and SiC Family of Power Switching Devices
Comparison Between Competing Requirements of GaN and SiC Family of Power Switching Devices
复制标题
GaN 和 SiC 系列功率开关器件的竞争要求比较
DOI：
10.1088/1757-899x/738/1/012004
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Yuanhang Zhang
中科院分区：
文献类型：
--
作者：
Yuanhang Zhang
GaN和SiC已被广泛研究用于未来的高效率功率开关系统。到目前为止，使用这些宽带隙材料的工作晶体管的原型已经展示了上级性能，表明了巨大的潜力。本文比较了两种材料在功率开关领域的三个主要要求：阻断电压，传导损耗（功率效率）和成本。在比较的基础上，得出GaN和SiC将共存的结论，因为它们各有优势，并且它们都不能取代对方。
GaN and SiC have been widely investigated for future power switching systems with high efficiencies. So far, prototypes of working transistors using these wide bandgap materials have demonstrated the superior performances suggesting the great potential. This article compares two materials over three main requirements in the power switching realm: the blocking voltage, the conduction loss (power efficiency) and the cost. Based on the comparison, a conclusion is drawn that GaN and SiC will be coexistent for each of them has own advantages and neither of them can replace the other.
影响因子：
5
作者：
S. Dimitrijev;Jisheng Han;H. A. Moghadam;A. Aminbeidokhti
通讯作者：
S. Dimitrijev;Jisheng Han;H. A. Moghadam;A. Aminbeidokhti