Exciton and carrier motion in quaternary AlInGaN
Exciton and carrier motion in quaternary AlInGaN
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四元 AlInGaN 中的激子和载流子运动
DOI：
10.1063/1.1586782
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发表时间：
2003
影响因子：
4
通讯作者：
R. Gaska
中科院分区：
文献类型：
--
作者：
K. Kazlauskas;G. Tamulaitis;A. Žukauskas;M. Khan;J. Yang;Jian Ping Zhang;E. Kuokštis;G. Simin;M. Shur;R. Gaska
研究了四元AlInGaN外延层光致发光的斯托克斯位移和带宽随温度和激发功率的变化规律。在低激发功率下，铟逐渐掺入AlGaN中，分别导致带峰位置和带宽的S形和W形温度依赖性。在高激发功率下，S-和W-行为消失;然而，增加的铟摩尔分数在高温下增强了发光带的红移。我们的研究结果表明，纳入铟到AlGaN合金输运性能有显着的影响。在低温和低激发功率下，铟的掺入有利于局域激子的跳跃，而在高温和高激发功率下，它维持离域载流子的自由运动，从而通过屏蔽导致带隙重整化。
Temperature and excitation power dependences of the photoluminescence Stokes shift and bandwidth were studied in quaternary AlInGaN epilayers as a function of indium content. At low excitation power, gradual incorporation of indium into AlGaN is shown to result in S- and W-shaped temperature dependences of the band peak position and bandwidth, respectively. At high excitation power, the S- and W-behavior disappears; however, increased indium molar fraction boosts the redshift of the luminescence band at high temperatures. Our results indicate that the incorporation of indium into AlGaN has a noticeable impact on the alloy transport properties. At low temperatures and low excitation power, the indium incorporation facilitates hopping of localized excitons, whereas at high temperatures and high excitation power, it sustains free motion of delocalized carriers that results in the band-gap renormalization via screening.
影响因子：
4
作者：
Hirayama, H;Kinoshita, A;Aoyagi, Y
通讯作者：
Aoyagi, Y